Compact InP-based HBT VCOs with a wide tuning range at W- and D-band

Baeyens, Y.; Dorschky, C.; Weimann, Nils; Lee, Qinghung; Kopf, R. F.; Georgiou, G.; Mattia, J.P.; Hamm, R. A.; Chen, Young-Kai

doi:10.1109/22.898990

Cited by 48 publications

(21 citation statements)

References 9 publications

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“…3, which indicates the phase noise to be -88 dBc/Hz at 1-MHz offset. This is not only the best phase noise result among the previously reported W-band HEMT VCOs [1]- [5], but also rivals those of the HBTbased VCOs [6]- [7]. …”

Section: Measured Resultssupporting

confidence: 53%

“…Though they demonstrated good power performance, the special processes are not compatible with other MMIC components. With the MMIC technologies advanced in the recent years, millimeter-wave MMIC oscillators operated at W-band frequencies implemented based on HEMT and HBT devices were reported [1]- [7]. HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5].…”

Section: Introductionmentioning

confidence: 99%

“…HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5]. On the other hand, HBTs has inherent low device 1/f noise characteristics, oscillators based on InP-based HBT to achieve low phase noise performance [6]- [7].…”

Section: Introductionmentioning

confidence: 99%

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An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Chen

Tsai

et al. 2003

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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-A W-band voltage control oscillator (VCO) using 0.1-m AlGaAs/InGaAs/GaAs PHEMT MMIC technology with ultra low phase noise is presented. This VCO demonstrated an operation frequency centered at 97 GHz with a tuning range of 2 GHz and an output power of 1 mW. The measured single side-band phase noise is -88 dBc/Hz at 1MHz offset. To the best of our knowledge, this phase noise performance is not only the best among the previously reported results for HEMT MMIC VCO at this frequency, but also rivals those for most VCOs using HBTs.

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Section: Measured Resultssupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Chen

Tsai

et al. 2003

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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“…As a result, it has undesirable common-mode stability issues [12]. To suppress these unwanted common-mode oscillation, the common-mode point of the source degeneration capacitor C 2 is floating.…”

Section: Bmentioning

confidence: 99%

A colpitts LC VCO with Miller-capacitance gm enhancing and phase noise reduction techniques

Reynaert

Steyaert

2011

2011 Proceedings of the ESSCIRC (ESSCIRC)

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A 60 GHz Colpitts LC VCO with Miller-capacitance gm enhancing and phase noise reduction techniques is realized in 90 nm CMOS. With the Miller capacitance, the tuned-input tuned-output oscillator and the conventional Colpitts oscillator are combined together, thereby solving its start-up issues and improving phase noise performance. Moreover, it is found that the oscillator is robust to the tank mistuning. The proposed oscillator achieves a phase noise of -102 dBc/Hz at 1 MHz offset from 57.6 GHz, consuming 7.2 mW from a power supply of 0.6 V. The tuning range is from 55.8 GHz to 61.1 GHz and the measured single-ended output power is about -7 dBm. Accordingly, the figures-of-merit are FOM -189 and FOM T -188 respectively.

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“…In addition, these circuits are readily integrated into systems. VCOs have been reported in InP HBT up to 106 GHz with dBc/Hz phase noise at 1 MHz offset [1], SiGe HBTs up to 70 GHz and 88 GHz with dBc/Hz at 1 MHz offset [2], [3]. In this paper, a fully integrated VCO in InP single heterojunction bipolar transistor (SHBT) technology with GHz will be presented.…”

Section: Introductionmentioning

confidence: 98%

80-GHz differential VCO in InP SHBTs

Lao

Jensen

Guinn

et al. 2004

IEEE Microw. Wireless Compon. Lett.

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A high frequency millimeter-wave voltage-controlled oscillator (VCO) has been designed, manufactured and tested in InP single heterojunction bipolar transistor technology. The fully integrated fundamental differential VCO features high operating frequency up to 80 GHz with low phase noise about 118 dBc/Hz at 1-MHz offset and 5% tuning range. The VCO consumes only 95-mW power at a power supply of 5 V, while providing 2 dBm single-ended output power and 1 dBm for differential output power. The die size is 0.28 mm 2 .

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Compact InP-based HBT VCOs with a wide tuning range at W- and D-band

Cited by 48 publications

References 9 publications

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

A colpitts LC VCO with Miller-capacitance gm enhancing and phase noise reduction techniques

80-GHz differential VCO in InP SHBTs

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