Compact 1-Bit Full Adder and 2-Bit SRAMs Using n-SWS-FETs

Salama, Husien; Saman, B.; Gudlavalleti, R. H.; Mays, R.; Heller, E.; Chandy, John A.; Jain, F.

doi:10.1142/s0129156420400133

Cited by 2 publications

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“…A gold capping layer was added to the waveguides with copper cladding to avoid copper oxidation and facilitate wire bonding. The processed wafers were finally cleaved into 1-2-mm-long bars and indium-mounted onto copper blocks (Salama et al, 2021).…”

Section: Terahertz Plasmatic Collimator Design 4 Results and Discussionmentioning

confidence: 99%

Surface Plasmon Lasers: Quantum Dot

Ahmed

2022

JCSTS

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A surface plasmon laser incorporates a metal layer, an additional medium layer given on the metal layer, and a round structure segment in which a murmuring exhibition mode is created in which surface plasmon light is produced because of surface plasmon reverberation on a connection point with the metal layer pivots along a circle, and a twisted piece framed to yield a piece of laser light created in the round structure part of the addition medium layer. We consider a thin layer of an n-type semiconductor sandwiched between a metal and a p-type semiconductor, and the p-n intersection is forward-one-sided. The mode design of the SPW, engendering along the metal surface, stretches out up to the p-n intersection, where it incites electron-opening recombination and gets intensified. The optical increase of the SPW laser can be made practically identical to that of a diode laser by lessening the thickness of the sandwich layer.

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Section: Terahertz Plasmatic Collimator Design 4 Results and Discussionmentioning

confidence: 99%

Surface Plasmon Lasers: Quantum Dot

Ahmed

2022

JCSTS

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Numerical Investigation of the Electrothermal Properties of SOI FinFET Transistor

Nasri

Salama

2023

Int. J. Hi. Spe. Ele. Syst.

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This paper investigates the non-Fourier transient heat transfer in an SOI FinFET transistor. The calibrated drift-diffusion (D-D) model in conjunction with the ballistic diffusive (BDE) model is used as an electrothermal model to predict phonon and electron transports in the quasi-ballistic regime. The finite element method has been employed to generate the numerical results. The proposed mathematical formulation was found to capture the transfer characteristics and the temporal temperature as given by TCAD simulation and experimental data. On the other hand, we have demonstrated that after 100 ns, the 14 nm Bulk FinFET supports better temperature distribution than the 14 nm SOI FinFET.

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Compact 1-Bit Full Adder and 2-Bit SRAMs Using n-SWS-FETs

Cited by 2 publications

References 0 publications

Surface Plasmon Lasers: Quantum Dot

Surface Plasmon Lasers: Quantum Dot

Numerical Investigation of the Electrothermal Properties of SOI FinFET Transistor

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