Common-Centroid FinFET Placement Considering the Impact of Gate Misalignment

Abstract

The FinFET technology has been regarded as a better alternative among different device technologies at 22nm node and beyond due to more effective channel control and lower power consumption. However, the gate misalignment problem resulting from process variation based on the FinFET technology becomes even severer compared with the conventional planar CMOS technology. Such misalignment may increase the threshold voltage and decrease the drain current of a single transistor. When applying the FinFET technology to analog circuit design, the variation of drain currents will destroy the current matching among transistors and degrade the circuit performance. In this paper, we present the first FinFET placement technique for analog circuits considering the impact of gate misalignment together with systematic and random mismatch. Experimental results show that the proposed algorithms can obtain an optimized common-centroid FinFET placement with much better current matching.