Commercial GaN-Based Power Electronic Systems: A Review

Pushpakaran, Bejoy N.; Subburaj, Anitha Sarah; Bayne, Stephen

doi:10.1007/s11664-020-08397-z

Cited by 76 publications

(44 citation statements)

References 23 publications

(22 reference statements)

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“…Currently a field of applications where GaN based devices are also entering everyday life and replacing Si on a massive scale, is related to power electronics, [1][2][3][4][5][6] with applications as voltage transformers or inverters, ranging from power distribution grids, electrical vehicles, photovoltaic inverters, to simple household items such as power supplies. [7] The vast majority of GaN-based devices require besides ntype also p-type doping, and it is well-known that the group-II element Mg is the only technologically feasible acceptor dopant in GaN. [3][4][5]8] Yet, Mg doping suffers from a number of limitations, most notably the deep nature of the acceptor level at ≈245 meV, [9] which means that high dopant concentrations have to be incorporated in order to realize the hole concentrations required in the devices.…”

Section: Introductionmentioning

confidence: 99%

“…Figure2displays the fitted relative interstitial fractions of27 Mgi plotted as a function of the number of recorded detector events throughout experiments with samples of all doping types, with the various colors representing different implantation temperatures. While the number of recorded events can be translated directly into implanted fluences of27 Mg [every 1×107 …”

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Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

Wahl

Correia

Costa

et al. 2021

Adv Elect Materials

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Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location of 27Mg is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. The amphoteric nature of Mg is elucidated, i.e., the concurrent occupation of substitutional Ga and interstitial sites: following room temperature ultra‐low fluence (≈2 × 1010 cm−2) implantation, the interstitial fraction of Mg is highest (20–24%) in GaN pre‐doped with stable Mg during growth, and lowest (2–6%) in n‐GaN:Si, while undoped GaN shows an intermediate interstitial fraction of 10–12%. Both for p‐ and n‐GaN prolonged implantations cause interstitial 27Mg to approach the levels found for undoped GaN. Implanting above 400 °C progressively converts interstitial Mg to substitutional Ga sites due to the onset of Mg interstitial migration (estimated activation energy 1.5–2.3 eV) and combination with Ga vacancies. In all sample types, implantations above a fluence of 1014 cm−2 result in >95% substitutional Mg. Ion implantation is hence a very efficient method to introduce Mg into substitutional Ga sites, i.e., challenges toward high electrical activation of implanted Mg are not related to lack of substitutional incorporation.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

Wahl

Correia

Costa

et al. 2021

Adv Elect Materials

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“…As an important member of Group III nitrides, the thermodynamically stable wurtzite-structure gallium nitride (GaN), a well-known wide bandgap semiconductor with a fundamental bandgap energy of 3.4 eV 12 , 13 , is quantitatively investigated as a revolutionary material due to its unique electronic and optical properties 14 , 15 . In the case of catalytic applications, GaN is increasingly investigated as a photocatalyst because of its high chemical and thermal stability 11 , 12 .…”

Section: Introductionmentioning

confidence: 99%

Gallium nitride catalyzed the direct hydrogenation of carbon dioxide to dimethyl ether as primary product

Liu

Kang²,

Huang

et al. 2021

Nat Commun

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The selective hydrogenation of CO2 to value-added chemicals is attractive but still challenged by the high-performance catalyst. In this work, we report that gallium nitride (GaN) catalyzes the direct hydrogenation of CO2 to dimethyl ether (DME) with a CO-free selectivity of about 80%. The activity of GaN for the hydrogenation of CO2 is much higher than that for the hydrogenation of CO although the product distribution is very similar. The steady-state and transient experimental results, spectroscopic studies, and density functional theory calculations rigorously reveal that DME is produced as the primary product via the methyl and formate intermediates, which are formed over different planes of GaN with similar activation energies. This essentially differs from the traditional DME synthesis via the methanol intermediate over a hybrid catalyst. The present work offers a different catalyst capable of the direct hydrogenation of CO2 to DME and thus enriches the chemistry for CO2 transformations.

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“…Hence, it is imperative to focus on the power converter design based on the WBG semiconductor devices. [10][11][12][13][14] Moreover, the estimated global GaN device market is expected to hit $1.24 billion by 2027 from the $110.3 million mark in 2019. It is going to enact a remarkable CAGR of 35.4% during 2020 to 2027.…”

Section: Introductionmentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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Commercial GaN-Based Power Electronic Systems: A Review

Cited by 76 publications

References 23 publications

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

Gallium nitride catalyzed the direct hydrogenation of carbon dioxide to dimethyl ether as primary product

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

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