Comments, on 'Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes' (and reply)

Krishnamurthi, K.; Harrison, Robert G.; Rydberg, Anders; Grönqvist, Hans; Kolberg, E.

doi:10.1109/55.144982

Cited by 4 publications

References 5 publications

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Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors

Sağlam

Mutamba

Megej

et al. 2003

Applied Physics Letters

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Articles you may be interested inEffects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures J. Appl. Phys. 113, 014505 (2013); 10.1063/1.4773334 Influence of the polarization on interfacial properties in Al/SiO 2 /GaN/Al 0.4 Ga 0.6 N/GaN heterojunction metal-insulator-semiconductor structures Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors

Sağlam

Mutamba

Megej

et al. 2003

Applied Physics Letters

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Heterostructure barrier varactors at submillimetre waves

Kollberg

Stake

Dillner

1996

Phil. Trans. R. Soc. Lond. A

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We present an overview of recent results concerning quantum barrier varactors, also called heterostructure barrier varactors (hbv). This device is normally constructed as a mesa device, with one or several thin (ca. 200 A) barriers made from a larger bandgap material. The diodes are excellent as multipliers and have several advantages over the common Schottky barrier varactor. The hbv only generates odd harmonics of the input power, can be built to handle large powers and permits a large device area at very high frequencies. We present theoretical design and performance characteristics for triplers and quintuplers and give an overview of hbv multiplier experiments.

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Single barrier varactors for submillimeter wave power generation

Nilsen

Grönqvist

Hjelmgren

et al. 1993

IEEE Trans. Microwave Theory Techn.

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Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modelling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated IV-, and CV characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modelled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modelled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favourably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In .the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

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Comments, on 'Millimeter- and submillimeter-wave multipliers using quantum-barrier-varactor (QBV) diodes' (and reply)

Cited by 4 publications

References 5 publications

Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors

Influence of polarization charges in Al0.4Ga0.6N/GaN barrier varactors

Heterostructure barrier varactors at submillimetre waves

Single barrier varactors for submillimeter wave power generation

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