Comments on "GaAs FET device and circuit simulation in SPICE"

Divekar, D.

doi:10.1109/t-ed.1987.23352

Cited by 17 publications

(4 citation statements)

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“…Measuring all four capacitances and transcapacitances can become a difficult problem [8, 9]. It is also possible for the individual capacitances to fail to conserve charge, even if the total gate charge is conserved; thus, an additional constraint on the division exists, which is sometimes not respected [3]. Especially problematical is a charge discontinuity occurring when the drain-to-source voltage passes through zero [5].…”

Section: Theorymentioning

confidence: 99%

Division by current: a new approach to FET capacitance modeling

Maas

2011

Int. j. microw. wirel. technol.

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This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

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Section: Theorymentioning

confidence: 99%

Division by current: a new approach to FET capacitance modeling

Maas

2011

Int. j. microw. wirel. technol.

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“…There has been some debate on charge conservation and the Statz model. Divekar [1] has pointed out that charge is not conserved in the Statz model, and suggests that the total channel charge should be divided between the drain and source. In their reply, [9] they try to prove that source and drain charges are not physically correct state variables, and the division leads to unphysical results.…”

Section: Dividing the Statz Gate Chargementioning

confidence: 99%

“…A method for dividing the MESFET gate charge into gate-drain and gate-source portions based on the energy conservation rule is developed, and the method is applied to the well-known Statz gate charge as an example.Approximate expressions for the gate and channel charges can be written based on semiconductor equations, but it is not quite clear which part of the channel charge should be assigned to the source and which part to the drain. The division ratio is bias and temperature dependent instead of being a constant.Various division rules for MOSFETs have been proposed in References [1][2][3][4][5][6]. Constant ratios like 50 50 , and 40 60 and linear grading [4-6] have been proposed, and the same kind of approaches have been applied to MESFETs [7,8].…”

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A new rule for MESFET gate charge division based on the energy conservation principle

Kallio¹,

Valtonen²

2004

Circuit Theory & Apps

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SUMMARYThe energy conservation problem in the MESFET gate charge model is presented. The energy conservation requirement leads to symmetrical transcapacitances in contradiction to the commonly accepted approaches. The transcapacitance symmetry is completely independent of device symmetry. The resulting small-signal capacitances are reciprocal. Reciprocal capacitances are often considered charge nonconservative because they do not contain transcapacitances, but in this approach reciprocity is the result of transcapacitance symmetry and the charge conservation problem is avoided since the charge-based model includes the transcapacitances. A method for dividing the MESFET gate charge into gate-drain and gate-source portions based on the energy conservation rule is developed, and the method is applied to the well-known Statz gate charge as an example.

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Approach for developing a large-signal model of a 150-GHz HEMT

Diskus

Bergamaschi

Schefer

et al. 1996

Int. J. Microw. Mill.-Wave Comput.-Aided Eng.

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In this study, the development of a large‐signal model describing the electrical behavior of an InAIAs/InGaAs/InP‐HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T‐gate of 0.25‐μm footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP‐MDS or SPICE. The procedure outlined results in an easily applicable model which produces very good fits to the measured S‐parameters. © 1996 John Wiley & Sons, Inc.

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Comments on "GaAs FET device and circuit simulation in SPICE"

Cited by 17 publications

References 0 publications

Division by current: a new approach to FET capacitance modeling

Division by current: a new approach to FET capacitance modeling

A new rule for MESFET gate charge division based on the energy conservation principle

Approach for developing a large-signal model of a 150-GHz HEMT

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