Approach for developing a large-signal model of a 150-GHz HEMT

Abstract

In this study, the development of a large‐signal model describing the electrical behavior of an InAIAs/InGaAs/InP‐HEMT will be discussed. The transistors under question were fabricated at our laboratory. They revealed a transit frequency of 150 GHz, which is, to our knowledge, the best result obtained with a T‐gate of 0.25‐μm footprint. The aim of this project was to develop a model of this transistor for simulating nonlinear circuits with commercial simulator software like HP‐MDS or SPICE. The procedure outlined results in an easily applicable model which produces very good fits to the measured S‐parameters. © 1996 John Wiley & Sons, Inc.