Comment on “Luminescent Nanoring Structures on Silicon”

Reply to “Comment On Luminescent Nanoring Structures On Silicon”

“…This happens when the CdS-treated silicon wafer is annealed at around the desorption temperature of silicon oxide (~800 C) in ultrahigh-vacuum chamber. Following this article, Jones et al [2] have suggested an alternative interpretation based on a similar pattern that they obtained in a different experiment. In what follows, we will reply to these comments in greater detail.…”

“…In our experiment, the silicon wafer with a thin oxide layer is put into an ethanol suspension of CdS nanoparticles. The incorporation of the nanoparticles into the oxide layer is aided by the ultrasonic treatment and therefore there is considerable difference between our system and that of Jones et al They discuss [2] the void formation during the thermal decomposition of the silicon oxide layer, which can lead to the pattern formation. While we appreciate this point as a possibility, we believe that under the present circumstances, this has no significant role in deciding the surface morphology of the silicon wafers described in our paper.…”