Comment on “Evidence for phase-explosion and generation of large particles during high power nanosecond laser ablation of silicon” [Appl. Phys. Lett. <b>76</b>, 783 (2000)]

Crăciun, V.

doi:10.1063/1.1386622

Cited by 5 publications

(4 citation statements)

References 14 publications

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“…One more thing to note from figures 9(c) and (d) is that homogeneous boiling starts to occur at around 1 × 10 8 W cm −2 , which is the lowest laser intensity used in this study. The experimental results (figures 6 and 7) prove this, and as mentioned earlier, a similar result was reported in the literature [19].…”

Section: Intensitysupporting

confidence: 91%

“…Considering the size of the debris, it is believed that they are formed mainly from the sub-surface homogeneous nucleation rather than surface evaporation. In fact, it was reported [19] that the ejection of droplets was detected during laser ablation of silicon at 1.06 µm for an irradiance as low as 1.1 × 10 −8 W cm −2 , which is close to the lowest intensity level used in this experiment. This fact is also proved by the simulation results below.…”

Section: Solidification Between the Pulsessupporting

confidence: 75%

“…Simulation results show that evaporation does not contribute much to the total mass removal process for all the intensities considered in this study. In addition, homogeneous boiling seems to start at around 1 × 10 8 W cm −2 as described in [19]. It is interesting that melt ejection mode is about 7-9 times more efficient than evaporation and homogeneous boiling modes in terms of energy efficiency.…”

Section: Resultsmentioning

confidence: 86%

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Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

Lim¹,

Ki²,

Mazumder³

2006

J. Phys. D: Appl. Phys.

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A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 10 8-10 9 W cm −2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364-72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases.

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Section: Intensitysupporting

confidence: 91%

Section: Solidification Between the Pulsessupporting

confidence: 75%

Section: Resultsmentioning

confidence: 86%

See 1 more Smart Citation

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

Lim¹,

Ki²,

Mazumder³

2006

J. Phys. D: Appl. Phys.

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“…The main concern in Craciun's comment, 3 as noted in the last paragraph, is the higher threshold irradiance for explosive boiling determined in Ref. 1 than that reported in other studies.…”

contrasting

confidence: 42%

Response to “Comment on ‘Evidence for phase explosion and generation of large particles during high power nanosecond laser ablation of silicon’ ” [Appl. Phys. Lett. 79, 442 (2001)]

Yoo

Jeong

Mao

et al. 2001

Applied Physics Letters

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Nanostructuring of a silicon surface by laser redeposition of Si vapor

Lugomer

Maksimović

Karacs

et al. 2009

Journal of Applied Physics

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We report on the surface nanostructuring of silicon wafer by self-organization of redeposited Si nanoparticles, at various energy levels, in the vaporization regime of laser-matter interaction. By using the semiconfined configuration, a quasi-two-dimensional turbulent Si vapor field with gradients of pressure and temperature is formed. The turbulent field evolves into point vortices which condense into Si nanodroplets. At a low laser energy of ∼1.2 J (0.23 GW/cm2), the inertial instability of nanodroplets under gradients of pressure and temperature, cause their intermittent accumulation in the low-pressure regions of turbulent field. The solidification of Si nanodroplets into particles and their redeposition, cause a simple two-dimensional low density nanostructuring of Si wafer in the near periphery region, and a high density nanostructuring in the periphery region of the spot. The pattern of redeposited Si nanoparticles in these regions is equivalent to the pattern of point vortices in a two-dimensional turbulent field. Such a pattern of point vortices is obtained by numerical simulation from the two-dimensional Navier–Stokes equation for forced turbulence. The self-organization of the coherent point vortex pattern is generated by numerical simulation of the solitary turbulence model based on the nonlinear Schrödinger equation. At the high laser energy of ∼1.5 and ∼2.0 J (∼0.42 and ∼0.52 GW/cm2, respectively), the transition from simple intermittent two-dimensional nanoparticle organization into a continuous and more complex one takes place. The nanostructured pattern shows a continuous distribution of Si particles, whose size increases from the periphery toward the center without spatial intermittency, showing a gradient of particle size. In addition, the open and closed loops chain clusters appear, with morphology and fractal dimension similar to the chain clusters which grow according to the Meakin–Jullien model of cluster-cluster aggregation. At the higher power density of ∼0.52 GW/cm2, the chain clusters become connected and tend to compactification. They form a network similar to the one obtained by numerical simulation of two-dimensional turbulence at small Stokes numbers. The silicon surface nanostructured by recondensation in this case comprises only the nanometer sized particles.

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Comment on “Evidence for phase-explosion and generation of large particles during high power nanosecond laser ablation of silicon” [Appl. Phys. Lett. 76, 783 (2000)]

Cited by 5 publications

References 14 publications

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

Response to “Comment on ‘Evidence for phase explosion and generation of large particles during high power nanosecond laser ablation of silicon’ ” [Appl. Phys. Lett. 79, 442 (2001)]

Nanostructuring of a silicon surface by laser redeposition of Si vapor

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