Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology

Loveless, T. D.; Jagannathan, S.; Zhang, E. X.; Fleetwood, D. M.; Kauppila, J. S.; Haeffner, T. D.; Massengill, L.W.

doi:10.1109/tns.2016.2637699

Cited by 15 publications

(9 citation statements)

References 23 publications

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“…The vulnerability of VCO architectures with respect to TID effects for space applications as well as in HEP experiments are explored in [29], whereas the effects of radiation-induced single-event-effects (SEEs) in VCOs are studied and a few possible remedies are suggested with some design improvements in [28,30,31]. In comparison, the knowledge about the effects of ionizing radiation on the performance of QVCOs are limited due to scarcity in the number of studies [32,33] done on QVCOs under radiation exposure. The SEE induced effects are studied in [32] on QVCOs implemented in 65 nm bulk CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

“…The SEE induced effects are studied in [32] on QVCOs implemented in 65 nm bulk CMOS technology. The TID induced effects on a parallel-coupled QVCO implemented in 32 nm silicon-on-insulator (SOI) CMOS technology is explored in [33]. The study reports on the degradation of several performance parameters (oscillation frequency, phase noise and power consumption), but gives no insight on the radiation induced effects on quadrature phase accuracy.…”

Section: Introductionmentioning

confidence: 99%

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TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology

2022

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This article presents a comprehensive assessment of the ionizing radiation induced effects on the performance of quadrature phase LC-tank based voltage-controlled-oscillators (VCOs). Two different quadrature VCOs (QVCOs) that are capable of generating frequencies in the range of 2.5 GHz to 2.9 GHz are implemented in a commercial 65 nm bulk CMOS technology to target for harsh radiation environments like space applications and high-energy physics (HEP) experiments. Each of the QVCOs consumes 13 mW power from a 1.2 V supply. The architectures are based on the popular implementation of two different types of QVCOs: parallel-coupled QVCO (PQVCO) and super-harmonic coupled QVCO (SQVCO). The various performance metrics (oscillation frequency, quadrature phase, phase noise, frequency tuning range, and power consumption) of the two different QVCOs are evaluated with respect to a Total ionizing Dose (TID) up to a level of approximately 100 Mrad (SiO2) through X-ray irradiation. During irradiation, the electrical characterization of the samples of the prototype are performed under biased condition at room temperature. Before irradiation, the QVCOs (PQVCO and SQVCO) achieve phase noise equal to −115 dBc/Hz and −119 dBc/Hz at 1 MHz offset, resulting in figure-of-merit (FoM) of −172.2 dBc/Hz and −176.4 dBc/Hz respectively. The test-setup of the TID experiment is discussed and the results obtained are statistically analyzed in this article to perform a comparative study of the performance of the two different QVCOs and evaluate the effectiveness of the radiation hardened by design techniques (RHBDs) employed in the implementations. Post-irradiation, the overall variations of the frequencies of the oscillators are less than 1% and the change in tuning range (TR) is less than 5% as observed from the tested samples.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology

2022

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“…These efforts have been focused on the active devices, such as MOS transistors and varactors. Due to their well-known SEE sensitivity [1]- [5] and Total Ionizing Dose (TID) degradation [1], [6], [7], those components traditionally were the major contributors to radiation sensitivity in Voltage-Controlled Oscillators (VCOs). The LC tank itself, being composed of capacitors and an inductor, both passive components, was generally thought to be insensitive to ionizing radiation.…”

Section: Introductionmentioning

confidence: 99%

Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS

Biereigel

Kulis

Leroux

et al. 2021

IEEE Trans. Nucl. Sci.

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This article describes a previously unreported singleevent radiation effect in spiral inductors manufactured in a commercial CMOS technology when subjected to ionizing radiation. Inductors play a major role as the component determining the frequency of LC tank oscillators, which is why any radiation effects in these passive components can have detrimental impact on the performance of clock generation circuits. Different experiments performed to localize and characterize the Single-Event Effect (SEE) response in a radiation-hardened PLL circuit are discussed and presented together with an hypothesis for the underlying physical mechanism.

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“…Since inductor capacitor-voltage controlled oscillator (LC-VCOs) has better phase noise performance over delay cell-based ring oscillators, SET tolerance of LC-VCO has been reported in several works [13][14][15][16][17][18][19][20]. In [13], a decoupling resistor is used in series with a bias transistor to minimise the SET effect in the LC VCO.…”

Section: Introductionmentioning

confidence: 99%

“…A similar approach was proposed with a distributed bias technique in [14]. TID effects on silicon-on-insulator (SOI)based VCOs have been examined in [15]. The performance of the ring and LC-oscillator-based PLL is examined using 65 nm bulk CMOS against the TID and SEU sensitivity [16,17].…”

Section: Introductionmentioning

confidence: 99%

Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit

Karthigeyan¹,

Radha²,

Manikandan

2021

IET Circuits, Devices & Syst

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Single-event transients (SETs) due to heavy-ion (HI) strikes adversely affect the electronic circuits in the sub-100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage-controlled oscillators (VCOs) without affecting the circuit specifications. A circuit asymmetry technique is used for faster recovery of the oscillator in the event of a single event transient (SET) caused by an ion hit. Also, a new SET tolerant inductor capacitor-voltage controlled oscillator (LC-VCO) topology is proposed for a radiation environment that shows reduced phase displacement, amplitude displacement, and recovery time. A comparison has been made with various LC-VCOs that have an inherent rad-hard capability which proves a significant improvement in SET sensitivity. K E Y W O R D S radiation hardening (electronics), voltage-controlled oscillatorsThis is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.

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Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology

Cited by 15 publications

References 23 publications

TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology

TID Sensitivity Assessment of Quadrature LC-Tank VCOs Implemented in 65-nm CMOS Technology

Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS

Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit

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