Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of Pb(ZrxTi1−x)O3 thin films

Abstract

Lead zirconate titanate [Pb(ZrxTi1−x)O3, PZT] thin films with various compositions, whose Zr/Ti ratio were varied as 40/60, 48/52, 47/53, and 60/40, were deposited on Pt(111)/Ti/SiO2/Si substrates by sol-gel method. A seeding layer was introduced between the PZT layer and the bottom electrode to control the texture of overlaid PZT thin films. A single perovskite PZT thin film with absolute (100) texture was obtained, when lead oxide was used as the seeding crystal, whereas titanium dioxide resulted in highly [111]-oriented PZT films. The dielectric and ferroelectric properties of PZT films with different preferential orientations were evaluated systemically as a function of composition. The maximums of relative dielectric constant were obtained in the morphotropic phase boundary region for both (100)- and (111)-textured PZT films. The ferroelectric properties also greatly depend on films’ texture and composition. The intrinsic and extrinsic contributions to dielectric and ferroelectric properties were discussed.

Effects of lanthanum doping on the preferred orientation, phase structure and electrical properties of sol–gel derived Pb1–3x/2Lax (Zr0.6Ti0.4)O3 thin films

“…Generally, ferroelectric properties of thin films depend on the stress state and domain structure [36], as well as crystallographic orientation, phase and microstructure [37,38]. In Fig.…”

The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films

“…The properties of PZT films for MEMS application are greatly different from those of bulk ceramics due to fine grains, extrinsic stress, and substrate effects. The properties of PZT films depend on many parameters, including preferred orientation, composition, microstructure, films thickness, buffer layer and dopants [2,3]. In view of the orientation of PZT films, the largest piezoelectric coefficient and dielectric constant were found in (1 0 0) oriented films [4][5][6].…”

“…Few work on preparation and properties of (1 0 0) PZT thick films (0.5-10 mm, which is more suitable for MEMS application) on LNO electrode. Among all the methods of preparing PZT thick films, a wet chemical process is widely employed due to its easy and low cost preparation, chemical homogeneity and facility of stoichiometry control [3,12]. This study was conducted to investigate the properties of highly (1 0 0) oriented PbZr 0.53 Ti 0.47 O 3 thick ($1 mm) films on LaNiO 3 coated silicon for MEMS application by chemical solution routes.…”

Lead-free (K, Na)NbO3 ferroelectric thin films: Preparation, structure and electrical properties

“…Compared with bulk materials, ferroelectric and piezoelectric thin films are important for memory and micro-sensor as well as micro-actuator applications [12]. Additionally, studies on ferroelectric thin films may provide possibility for us to further understand the intrinsic properties of the materials, because it is possible to grow textured or epitaxial thin films to control their crystallographic orientations [13].…”