Combating open circuit voltage loss in Sb2Se3 solar cell with an application of SnS as a back surface field layer

Karade, Vijay; Jang, Jun Sung; Kumbhar, Dhananjay D.; Rao, M.Rama Mohana; Pawar, Pravin S.; Kim, Sugil; Gour, Kuldeep Singh; Park, Jong‐Sung; Heo, Jaeyeong; Dongale, Tukaram D.; Kim, Jihun

doi:10.1016/j.solener.2022.01.010

Cited by 27 publications

(10 citation statements)

References 67 publications

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“…This BSF layer is supposed to minimize the recombination probability of minority charge carriers at the interface of metal/SnS contact. When p-type SnS absorber (hole density ∼10 15 cm −3 ) forms a p-n junction with n-type CdS buffer layer (electron density ∼10 17 cm −3 ), shifting of space charge width into the SnS absorber is occurred owing to the p-n + type configuration [77]. As a result of this, drift and diffusion take part together in transporting of charge carriers which results in increase of carrier collection.…”

Section: Influence Of Back Surface Field (Cu 2 O) Layer On Device Per...mentioning

confidence: 99%

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

Islam,

Thakur

2023

Phys. Scr.

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We report, a novel multi-step design simulation results on SnS absorber based solar cell architecture with ~4.5 times efficiency enhancement vis-à-vis reported experimental results. It is ascribed to an efficient control over inherent loss mechanism via device design novelty. The multi-step design modification in the device architecture comprised; (a) absorber bandgap widening at the interface, (b) considering donor interfacial defects at the SnS/buffer junction, (c) limiting the presence of the majority carrier at the interface via asymmetric doping at the SnS/buffer interfaces, and (d) employing back surface field at the absorber/back metal contact interface. This design approach resulted in achieving an optimal design configuration that exhibited significant improvements in open circuit voltage (119%), short circuit current (61%), fill factor (25.8%), and efficiency (347.6%) compared to the experimental benchmark. An overall effect of improved parameters, in the modified architecture of the SnS absorber based solar cell, led to substantial enhancement in efficiency close to ~19% vis-à-vis 4.23% reported in literature.

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Section: Influence Of Back Surface Field (Cu 2 O) Layer On Device Per...mentioning

confidence: 99%

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

Islam,

Thakur

2023

Phys. Scr.

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“…Dongale TD et al [25] The loss of the V OC in Sb The most well-known solar cell con guration is a large-area silicon p-n junction. The most common solar cell design is a silicon p-n junction.…”

Section: References Major Findingsmentioning

confidence: 99%

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Agrawal¹,

Singh²

2023

Preprint

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The paper describes the solar cell's design, ITO/CdS/Sb2Se3/CZTSe/Au. Experimental evidence that supports the model's predictions regarding output performance and current-voltage characteristics comes from CdS/Sb2Se3 solar cells with a hole transport layer (HTL). Sb2Se3 could be used in solar cells because it is non-toxic, affordable, and performs well. Because Sb2Se3 has a high-power conversion efficiency (6.5%), it is utilized as the absorber in thin-film solar cells. By simulating a best-practice solar cell configuration, including device optimization and band offset engineering, the SCAPS-1D simulator increased solar cell efficiency. The J-V characteristics of the simulated systems were simulated using SCAPS-1D to confirm the accuracy of the results. Current research focuses on the absorber for antimony selenide photovoltaic solar cells. The solar capacitance simulator was used to evaluate thin Sb2Se3 solar cells using SCAPS-1D software. From all the simulations, the conclusion arises that CZTSe as HTL gave the highest values of open-circuit voltage (VOC), i.e., 311mV, short circuit current (JSC), i.e., 28.246%, Fill Factor (FF), i.e., 45.48%, and Power Conversion Efficiency (PCE), i.e., 4%, was obtained through proposed solar cell architecture ITO/CdS/Sb2Se3/CZTSe/Au.

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“…11−14 SnS has also been used as BSF for enhancing the PV parameters. 15 Recently, carbon-based compounds have gained greater interest as better electrical conductors. Wang et al, in 2021, used C as a contact in solar cells based on Sb 2 Se 3 and achieved an efficiency of 6.09%.…”

Section: Introductionmentioning

confidence: 99%

“…MoOx was also incorporated as inorganic HTL in Sb 2 Se 3 solar cells . Numerical simulations were also performed using CuO, SnS, CZ-TA, CZTSe, and so forth. − SnS has also been used as BSF for enhancing the PV parameters …”

Section: Introductionmentioning

confidence: 99%

Simulation Study of an Antimony Selenide Solar Cell with Graphene Oxide as Hole Transport Material

Kumari

Mamta

Kumar

et al. 2023

ACS Appl. Electron. Mater.

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This study analyses the photovoltaic (PV) properties of antimony selenide-based solar structures using a solar cell capacitance simulator (SCAPS-1D). The software was used to improve the PV performance of Sb 2 Se 3 -based solar cells using ZnSe as the buffer layer and graphene oxide (GO) as the hole transport layer (HTL). The solar cell's performance was studied by varying the thickness, doping concentration, and defect density of the HTL and absorber layer. The performance was also studied by varying temperature, series and shunt resistance, and interface defects. Initially, a Sb 2 Se 3 / CdS/ITO-based solar cell was simulated with 4.98% efficiency and whose PV parameters agreed with the experimental result. There is an enhancement in solar cell performance by replacing CdS with ZnSe and adding GO up to a value of 17.36%. Further, optimizing various device parameters results in an enhancement of efficiency by up to 24.50%.

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Combating open circuit voltage loss in Sb2Se3 solar cell with an application of SnS as a back surface field layer

Cited by 27 publications

References 67 publications

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

Simulation Study of an Antimony Selenide Solar Cell with Graphene Oxide as Hole Transport Material

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