Colossal dielectric permittivity, reduced loss tangent and the microstructure of Ca1−xCdxCu3Ti4O12−2yF2y ceramics

Boonlakhorn, Jakkree; Prachamon, Jirata; Manyam, Jedsada; Krongsuk, Sriprajak; Thongbai, Prasit; Srepusharawoot, Pornjuk

doi:10.1039/d1ra02707g

Cited by 23 publications

(12 citation statements)

References 43 publications

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“…Hence, Na + is likely to occupy Cu 2+ sites. This observation is confirmed by earlier experimental and theoretical investigations 34,[40][41][42] . As demonstrated by Li et al 43 , Ti 4+ ions can reduce their oxidation state to Ti 3+ .…”

Section: Discussionsupporting

confidence: 88%

Computational and experimental investigations of the giant dielectric property of Na1/2Y1/2Cu3Ti4O12 ceramics

Boonlakhorn

Suksangrat

Sarakorn

et al. 2023

Sci Rep

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A modified sol-gel method was used to successfully produce Na1/2Y1/2Cu3Ti4O12 ceramics with high dielectric permittivity. The dielectric permittivity of Na1/2Y1/2Cu3Ti4O12 ceramics reaches values larger than 104 at room temperature and 1 kHz. Moreover, these ceramics exhibit two distinct thermally induced dielectric relaxations over a broad temperature range. The loss tangent is indeed small, ~0.032–0.035. At low temperatures, dielectric relaxation was attributed to the oxygen vacancy effect, while at high temperatures, it was attributed to grain boundary and sample-electrode contact effects. Our calculations revealed that Y and Na ions are likely to occupy Ca and Cu sites, respectively. As a result, other Cu related phases, especially CuO, were observed at the grain boundaries. Based on our analysis, there is a charge compensation between Na and Y ions in Na1/2Y1/2Cu3Ti4O12. Additionally, the Cu+ and Ti3+ states observed in our XPS study originate from the presence of an oxygen vacancy in the lattice. Last, the primary cause of the enormous dielectric permittivity of Na1/2Y1/2Cu3Ti4O12 ceramics primarily comes from the internal barrier layer capacitor effect.

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Section: Discussionsupporting

confidence: 88%

Computational and experimental investigations of the giant dielectric property of Na1/2Y1/2Cu3Ti4O12 ceramics

Boonlakhorn

Suksangrat

Sarakorn

et al. 2023

Sci Rep

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“…According to Bragg's law, the shift in the Bragg angle was affected by a change in the spacing of the crystallographic planes, where the tensile strain increases the d-spacing, causing a shift in the Bragg angle of the diffraction peak towards lower 2θ values, whereas compressive strain decreases the d-spacing, resulting the shift towards higher 2θ values in the XRD pattern [39]. Average grain size, which was estimated using SEM images and ImageJ software [40], is also shown in Figure 2c.…”

Section: Resultsmentioning

confidence: 99%

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

Pech

Kim

2022

Coatings

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Gallium oxide (Ga2O3) is a semiconductor with a wide bandgap of ~5.0 eV and large breakdown voltages (>8 MV·cm−1). Among the crystal phases of Ga2O3, the monoclinic β-Ga2O3 is well known to be suitable for many device applications because of its chemical and thermal stability. The crystalline quality of polycrystalline β-Ga2O3 films on c-plane sapphire substrates was studied by rapid thermal annealing (RTA) following magnetron sputtering deposition at room temperature. Polycrystalline β-Ga2O3 films are relatively simple to prepare; however, their crystalline quality needs enhancement. The β-phase was achieved at 900 °C with a crystallite size and d-spacing of 26.02 and 0.2350 nm, respectively, when a mixture of ε- and β-phases was observed at temperatures up to 800 °C. The strain was released in the annealed Ga2O3 films at 900 °C; however, the clear and uniform orientation was not perfect because of the increased oxygen vacancy in the film at that temperature. The improved polycrystalline β-Ga2O3 films with dominant (−402)-oriented crystals were obtained at 900 °C for 45 min under a N2 gas atmosphere.

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“…In the literature, numerous conduction models were employed to describe the dynamic of the charge carriers in the perovskite systems. 15,34 The total electrical conductivity at a particular temperature contains direct and alternative current components for amorphous, crystalline, and polycrystalline systems. Fig.…”

Section: Conductivity Studymentioning

confidence: 99%

Investigation of conduction mechanisms and permittivity–conductivity correlation in a Gd-based perovskite structure

Moualhi,

Zouaoui

2024

RSC Adv.

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Colossal dielectric permittivity, reduced loss tangent and the microstructure of Ca_1−xCd_xCu₃Ti₄O_12−2yF_2y ceramics

Abstract: CdF2 defect clusters result in enhancement of dielectric properties of the Ca1−xCdxCu3Ti4O12−2yF2y ceramics.

Cited by 23 publications

References 43 publications

Computational and experimental investigations of the giant dielectric property of Na1/2Y1/2Cu3Ti4O12 ceramics

Computational and experimental investigations of the giant dielectric property of Na1/2Y1/2Cu3Ti4O12 ceramics

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

Investigation of conduction mechanisms and permittivity–conductivity correlation in a Gd-based perovskite structure

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