Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Albrecht, M.; Schewski, Robert; Irmscher, K.; Galazka, Zbigniew; Markurt, Toni; Naumann, M.; Schulz, Tobias; Uecker, R.; Fornari, R.; Meuret, Sophie; Kociak, Mathieu

doi:10.1063/1.4863211

Cited by 31 publications

(29 citation statements)

References 37 publications

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“…[35] This allows TCOs to be explored at higher energy resolutions, as recently presented with doped In 2 O 3 nanoparticles [36] and films. [37] Alternatively, the combination of beam monochromation with modest energy resolution (≈50 meV) and post-acquisition deconvolution methods has improved the effective energy resolution down to 10 meV, and has been successfully applied to studies of near-IR plasmons in metals. [38] This work presents a study of the fabrication of ITO thin films and nanoscale triangular structures by electron beam lithography (EBL) and radio-frequency (RF) sputtering.…”

Section: Introductionmentioning

confidence: 99%

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Kapetanovic

Bicket

Lazar

et al. 2020

Advanced Optical Materials

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Transparent conductive oxides (TCOs) have strong potential for plasmonic applications. Given their easily tunable properties and low energy response, significant challenges in the controlled fabrication and precise characterization of TCOs must be better understood before this potential can be realized. Here, the mid‐ to near‐infrared plasmonic response of Sn‐doped In2O3 (ITO) nanostructures is presented, fabricated top‐down using electron beam lithography and radio‐frequency sputtering. These equilateral ITO triangles of different side lengths are imaged at high spatial and energy resolution with monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope. Applying the Richardson–Lucy (RL) deconvolution algorithm to experimental EELS spectra reveals localized surface plasmon (LSP) excitations between 150 and 550 meV and a 730 meV bulk plasmon. This very‐low‐energy response to an electron beam is compared with boundary element method simulations of nanostructures. These simulations use the dielectric functions of continuous thin films of the same materials, characterized by ellipsometry, 4‐point probe, and Hall effect tests. Additionally, upon rapid thermal annealing of ITO, blue‐shifts in LSP energy, and longer LSP lifetimes are examined as a consequence of an amorphous‐to‐polycrystalline transformation and an increase in the free carrier density.

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Section: Introductionmentioning

confidence: 99%

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Kapetanovic

Bicket

Lazar

et al. 2020

Advanced Optical Materials

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“…Several different p-type layers were used within heterostructures including NiO, [6][7][8][9] SrCu 2 O 2 , [ 10,11 ] AlGaN, [ 12 ] Si, [ 13 ] diamond, [ 14 ] ZnRh 2 O 4 , [ 15 ] ZnCo 2 O 4 , [ 9,16 ] AlCo 2 O 4 , [ 17 ] CuAlO 2 , [ 18 ] Cu 2 O, [ 19,20 ] and CuI. Recently, interest in the semiconducting properties of crystalline In 2 O 3 layers [24][25][26][27][28] and bulk crystals [29][30][31] arose for fundamental reasons but also to exploit the potential of In 2 O 3 in electronic devices. [ 18,23 ] Besides ZnO, oxides like TiO 2 , β -Ga 2 O 3 or In 2 O 3 are of high scientifi c interest as well.…”

Section: Introductionmentioning

confidence: 99%

pn‐Heterojunction Diodes with n‐Type In₂O₃

Wenckstern

Splith

Lanzinger

et al. 2015

Adv Elect Materials

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contact metals, diodes with rectifi cation suffi cient for material characterization were reported. [ 33 ] Nevertheless, rectifi cation has to be improved considerably to exploit In 2 O 3 within detectors or transistors. The realization of pn-heterodiodes is an alternative approach toward rectifying devices and was successful for the case of ZnO as n-type layer as mentioned above. As recently demonstrated, ZnCo 2 O 4 and NiO are especially interesting as p-type layer since they can be deposited at room temperature on the n-type oxide and offer very high rectifi cation up to ten orders of magnitude. [ 9 ] We report on the electric properties of p-ZnCo 2 O 4 /n-In 2 O 3 (ZCO/InO) and p-NiO/n-In 2 O 3 (NiO/InO) heterodiodes investigated at room temperature (RT) by current-voltage (IV), capacitance-voltage (CV) measurements and admittance spectroscopy. Additionally thermal admittance spectroscopy (TAS) was performed on a selected diode. Results and DiscussionA wide-angle X-ray diffraction pattern of a nominally undoped-In 2 O 3 thin fi lm is depicted in Figure 1 . On the (001)YSZ substrates, the In 2 O 3 thin fi lm grows expectedly in [001] direction. This is in-line with investigations of MBE-grown In 2 O 3 layers on (001)YSZ. [ 34 ] An infl uence of the In 2 O 3 :Mg surface layers on the XRD pattern was not observed. Atomic force microscopy showed that all samples are compact, without voids and without faceting. The surface morphology depicted in Figure 2 for a sample without In 2 O 3 :Mg surface layer is similar to that reported by Bierwagen et al. for a thin fi lm (labeled S7) grown by MBE under In-rich conditions at 650 °C (with nucleation layer grown at 600 °C). [ 35 ] For our PLD-grown thin fi lm of Figure 2 the root mean square roughness is about 4 nm and suffi ciently low for growth of pn-heterodiodes.The free electron concentration of our nominally undoped-In 2 O 3 thin fi lms was obtained from Hall effect measurements and is with 3 × 10 18 cm −3 rather high for creating diodes thereon. For such high doping, the extension of the space charge region is small and tunneling currents are likely contributing to current transport across the interface. A reduction of the doping density close to the surface should increase the space charge layer width making tunneling less likely. This should result in smaller leakage currents but may also increase the series resistance of the diodes. Sample series with compensated In 2 O 3 :Mg layers with thickness d of 0, 10, and 100 nm pn-Heterodiodes comprising the wide bandgap semiconducting oxide In 2 O 3 and amorphous p-conducting NiO or ZnCo 2 O 4 are realized. In 2 O 3 is grown at 600 °C and the amorphous p-type oxides at room temperature by pulsedlaser deposition. Highest rectifi cation of about four orders of magnitude is observed for structures with Mg-doped In 2 O 3 layers having lower carrier density than undoped layers. The p-ZnCo 2 O 4 /n-In 2 O 3 diodes do not show degradation at elevated temperatures of 150 °C, whereas the p-NiO/n-In 2 O 3 diodes degrade irreversi...

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“…• C for 40 h to oxidize In nanoparticles formed during the growth and therefore to improve the optical transmittance [22,23]. The samples were both sides epi-polished.…”

Section: Thin-film In 2 Omentioning

confidence: 99%

Compensating vacancy defects in Sn- and Mg-dopedIn2O3

et al. 2014

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MBE-grown Sn-and Mg-doped epitaxial In 2 O 3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In 2 O 3 , however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.

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Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Cited by 31 publications

References 37 publications

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

pn‐Heterojunction Diodes with n‐Type In₂O₃

Compensating vacancy defects in Sn- and Mg-dopedIn2O3

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Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Cited by 31 publications

References 37 publications

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

Tunable Infrared Plasmon Response of Lithographic Sn‐doped Indium Oxide Nanostructures

pn‐Heterojunction Diodes with n‐Type In2O3

Compensating vacancy defects in Sn- and Mg-dopedIn2O3

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pn‐Heterojunction Diodes with n‐Type In₂O₃