2021
DOI: 10.1117/1.ap.3.5.054001
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Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review

Abstract: Solid-state atomic-sized color centers in wide-band-gap semiconductors, such as diamond, silicon carbide, and hexagonal boron nitride, are important platforms for quantum technologies, specifically for single-photon sources and quantum sensing. One of the emerging applications of these quantum emitters is subdiffraction imaging. This capability is provided by the specific photophysical properties of color centers, such as high dipole moments, photostability, and a variety of spectral ranges of the emitters wit… Show more

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Cited by 12 publications
(11 citation statements)
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“…By embedding fluorescent, charge-sensitive defects within a transparent semiconducting substrate, solution voltage imaging can in principle be realized by optical detection of local changes in the near-surface semiconductor space-charge layer. Changes to this space-charge layer are known to modulate the fluorescence of the defects by altering the number of electrons bound to each, otherwise known as the charge state of the defect [7][8][9] . Such a hybrid optoelectronic approach has been proposed 10 and would occupy a hitherto unexplored voltage imaging regime, combining the spatial resolution of optical techniques with the long-term stability and minimal invasiveness of MEAs.…”
mentioning
confidence: 99%
“…By embedding fluorescent, charge-sensitive defects within a transparent semiconducting substrate, solution voltage imaging can in principle be realized by optical detection of local changes in the near-surface semiconductor space-charge layer. Changes to this space-charge layer are known to modulate the fluorescence of the defects by altering the number of electrons bound to each, otherwise known as the charge state of the defect [7][8][9] . Such a hybrid optoelectronic approach has been proposed 10 and would occupy a hitherto unexplored voltage imaging regime, combining the spatial resolution of optical techniques with the long-term stability and minimal invasiveness of MEAs.…”
mentioning
confidence: 99%
“…[ 17–24 ] When designing a PEC‐PD, not only the photoelectric conversion of materials, but also the efficiency of interface chemical reaction should be taken into account. [ 25–29 ] Nanowire (NW) structure provides a larger area of solid‐liquid reaction interface, exhibiting natural advantages in PEC‐PDs. [ 30–36 ] As the cornerstone in the field of optoelectronics, nitride semiconductors demonstrate outstanding optoelectronic properties, wide bandgap and excellent chemical stability.…”
Section: Introductionmentioning
confidence: 99%
“…Among these, fluorescence-based superresolution microscopy (f-SRM) techniques succeed in overcoming the resolution limits imposed by diffraction, reaching resolutions that range from 100 nm down to the subnanometer level 3 , 6 – 9 However, they still suffer from several significant drawbacks: (i) they require very specialized fluorescent probes, 10 , 11 (ii) some f-SRM techniques rely on laser beam exposure levels that can lead to phototoxicity and photodamage, 12 and (iii) unpredictable anomalous processes related to the distribution of f-SRM dyes in biological samples have been shown to exist 13 . Furthermore, due to the requirement of fluorescent labeling, their use is severely limited when it comes to resolving physicochemical properties of advanced nanomaterials or nanostructured devices that cannot be labeled.…”
Section: Introductionmentioning
confidence: 99%