Collective Motion of Conducting Filaments in Pt/n‐Type TiO₂/p‐Type NiO/Pt Stacked Resistance Switching Memory

Abstract

Filamentary resistance switching (RS) is one of the more obvious and useful phenomena in the family of RS mechanisms. In filamentary RS, the long reset switching time and substantially large power consumption are the critical obstacles for microelectronic applications. In this study, an innovative solution to overcome this reset problem is suggested by stacking n‐type TiO2 and p‐type NiO films. Interestingly, in this stacked structure, the region where filament rupture and rejuvenation occurs could be arbitrarily controlled to be at any location between the interface with the metal electrode and the TiO2/NiO interface by using an appropriate switching sequence. This collective motion behavior of conducting filaments can be practically used to reduce reset switching time from ∼100 μs to ∼150 ns, with an extremely high off/on resistance ratio of ∼106.

Attachment of nickel oxide nanoparticles on the surface of palygorskite nanofibers

“…There were numerous attractive applications of NiO in a variety of fields including catalysts [2], gas sensors [3], dye-sensitized solar cell [4,5], lithium ion battery [6], supercapacitor electrodes [7], and so on. Recently, NiO showed excellent resistive switching behavior and could be expected to find potential use in nonvolatile memorles [8,9]. In addition, nanocrystalline NiO with high surface area possessed better properties than that with low surface area.…”

Self-rectifying resistive switching device based on n-ZnO/p-NiO junction

“…Similarly, it is an appropriate routine to suppress the sneak current in a metal/p-oxide/n-oxide/metal device simultaneously containing resistive switching and diode effect. Unfortunately, there are few reports about resistive switching-based p-n oxides junctions [7,8]. Although p-n junction combination with unipolar switching cell (also one diode-one resistor) is proposed, it inevitably enhances the complexity of device fabrication [9][10][11].…”

Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

“…Recently, the random circuit breaker network model [2,3] and conical shape filament model [4,5] are differently developed to emphasize joule heat contribution on breaker and thermochemical-type resistance switching, respectively. The long switching time and large power consumption of RESET (transition from a low resistance state (LRS) to a high resistance state (HRS)) process need improvements [6]. Therefore, it is important to understand the joule heat generation in resistive switching RESET behavior for the fundamental understanding.…”