Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

Zhou, Peng; Li, Ye; Sun, Qing; Wang, Peng Fei; Jiang, An Quan; Ding, Shijin; Zhang, David Wei

doi:10.1186/1556-276x-8-91

Cited by 20 publications

(9 citation statements)

References 16 publications

(13 reference statements)

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“…Oxide materials with large dielectric constants (so-called high- k dielectrics) have attracted much attention due to their potential use as gate dielectrics in metal-oxide-semiconductor field-effect transistor (MOSFETs) [ 8 - 12 ]. Thicker equivalent oxide thickness, to reduce the leakage current of gate oxides, is obtained by introducing the high- k dielectric to real application [ 13 - 15 ].…”

Section: Reviewmentioning

confidence: 99%

Dielectric relaxation of high-k oxides

Zhao

Werner

et al. 2013

Nanoscale Res Lett

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Frequency dispersion of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic cause. Frequency dependence of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, could not be characterized before considering the effects of extrinsic frequency dispersion. Several mathematical models were discussed to describe the dielectric relaxation of high-k dielectrics. For the physical mechanism, dielectric relaxation was found to be related to the degree of polarization, which depended on the structure of the high-k material. It was attributed to the enhancement of the correlations among polar nanodomain. The effect of grain size for the high-k materials' structure mainly originated from higher surface stress in smaller grain due to its higher concentration of grain boundary.

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Section: Reviewmentioning

confidence: 99%

Dielectric relaxation of high-k oxides

Zhao

Werner

et al. 2013

Nanoscale Res Lett

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“…Finally, the deconvoluted Nb(3d) spectrum (Figure c) display two subpeaks at 206.78 and 209.386 eV, which is corresponded to Nb(3d 5/2 ) and Nb(3d 3/2 ) chemical states. The peaks values are varied slightly from the reported values of pure Nb 2 O 5 , which establishes the interaction between the atoms present on the Nb 2 O 5 and g-C 3 N 4 surfaces that resulted in the formation of effective heterojunctions between them. Additionally, no extra peaks are observed during deconvolution, which suggested the high purity of the sample.…”

Section: Resultsmentioning

confidence: 78%

Graphitic Carbon Nitride Impregnated Niobium oxide (g-C₃N₄/Nb₂O₅) Type (II) Heterojunctions and its Synergetic Solar-Driven Hydrogen Generation

Khan

Baig

Qurashi

2018

ACS Appl. Energy Mater.

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Graphitic carbon nitride (g-C3N4) based catalysts are evolving in energy harvesting applications due to their robustness, nontoxicity, and most important photocatalytic efficiencies. In this work, we successfully engineered g-C3N4/Nb2O5 type (II) heterojunction via pulse sonochemical technique based on opposite charge-induced heteroaggregation on the surface. The agglomerated spherical Nb2O5 nanoparticles (NPs) having diameter 30–40 nm observed on the lamellar surface of g-C3N4 in FESEM images. The XRD and XPS analysis confirm the orthorhombic phase and formation of the g-C3N4/Nb2O5 heterostructure. The FTIR spectra of g-C3N4/Nb2O5 show characteristic poly-s-triazine bands from 1250 to 1650 cm–1. Moreover, g-C3N4/Nb2O5 exhibited the lower bandgap value of 2.82 eV as compared to Nb2O5 (3.25 eV) with significant redshift and enhance visible light absorption. The Mott–Schottky (MS) analysis confirms the formation of heterojunction between g-C3N4 and Nb2O5, with significant band shifting toward lower hydrogen evolution reaction (HER) potential. The g-C3N4/Nb2O5 heterojunctions showed many folds enhanced photocurrent response from photoelectrochemical (PEC) water splitting, and the value reached to −0.17 mA/cm2 with good stability and insignificant dark photocurrent at 1.0 V vs RHE. The electrochemical impedance spectroscopic (EIS) measurements further elucidate the suppression of photogenerated electrons/holes as the radius of the semicircle significantly decreased in case of heterojunction formation. The enhanced photocatalytic hydrogen generation by the heterostructures could be attributed to the effective formation of heterojunctions between the g-C3N4 and Nb2O5 semiconductors, causing the migration of the photogenerated electrons and holes, hence increasing their lifetimes.

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“…As shown in Fig. 3f, g , the content of Nb 4+ (core level shift (CLS) 203.4, 206.1 eV) 44 , 45 in LiNb 2 O 5 is decreased from 48.8 to 30% after the reaction, indicating that LiNb 2 O 5 was oxidized. Correspondingly, the sulfur 2 p spectrum illustrates the reduction of Li 2 S 6 with the formation of Li 2 S 2 (CLS 161.7 eV) and Li 2 S (CLS 160 eV) 46 , 47 (Fig.…”

Section: Resultsmentioning

confidence: 84%

Dual redox mediators accelerate the electrochemical kinetics of lithium-sulfur batteries

et al. 2020

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The sluggish electrochemical kinetics of sulfur species has impeded the wide adoption of lithium-sulfur battery, which is one of the most promising candidates for next-generation energy storage system. Here, we present the electronic and geometric structures of all possible sulfur species and construct an electronic energy diagram to unveil their reaction pathways in batteries, as well as the molecular origin of their sluggish kinetics. By decoupling the contradictory requirements of accelerating charging and discharging processes, we select two pseudocapacitive oxides as electron-ion source and drain to enable the efficient transport of electron/Li+ to and from sulfur intermediates respectively. After incorporating dual oxides, the electrochemical kinetics of sulfur cathode is significantly accelerated. This strategy, which couples a fast-electrochemical reaction with a spontaneous chemical reaction to bypass a slow-electrochemical reaction pathway, offers a solution to accelerate an electrochemical reaction, providing new perspectives for the development of high-energy battery systems.

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Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

Cited by 20 publications

References 16 publications

Dielectric relaxation of high-k oxides

Dielectric relaxation of high-k oxides

Graphitic Carbon Nitride Impregnated Niobium oxide (g-C₃N₄/Nb₂O₅) Type (II) Heterojunctions and its Synergetic Solar-Driven Hydrogen Generation

Dual redox mediators accelerate the electrochemical kinetics of lithium-sulfur batteries

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Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition

Cited by 20 publications

References 16 publications

Dielectric relaxation of high-k oxides

Dielectric relaxation of high-k oxides

Graphitic Carbon Nitride Impregnated Niobium oxide (g-C3N4/Nb2O5) Type (II) Heterojunctions and its Synergetic Solar-Driven Hydrogen Generation

Dual redox mediators accelerate the electrochemical kinetics of lithium-sulfur batteries

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Graphitic Carbon Nitride Impregnated Niobium oxide (g-C₃N₄/Nb₂O₅) Type (II) Heterojunctions and its Synergetic Solar-Driven Hydrogen Generation