Cold Source Diodes With Sub-Unity Ideality Factor and Giant Negative Differential Resistance

Wang, Zhijiang; Xie, Xiaoxin; Zhang, Ligong; Cao, Ronggen; Liu, Xiaoyan; Cho, Sungjae; Liu, Fei

doi:10.1109/led.2022.3212681

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…The valence bands are overall more dispersive than the conduction bands. In terms of the PDOS, it is continuous in energy below the VBM but discrete above the CBM because of the presence of subgaps, which can lead to the NDR phenomenon when the materials are applied to FETs. ,, Besides, the electronic states near the VBM are mainly contributed from the p x and p y atomic orbitals, while those near the CBM are from the s and p z orbitals. We also summarized the band gaps as a function of the thickness of the 2D KL-Si layers, and the results computed at the level of HSE06, PBE-1/2, and PBE functionals have been displayed in Figure f.…”

Section: Resultsmentioning

confidence: 99%

“…The PVRs over 10 7 in the Si 9 H 6 -based nFET are much higher than those reported in previous studies at the same simulation level. 36,37,44 According to our previous study, 15 the giant NDR is caused by the presence of sub-gap over the CBM, which can modulate the band alignment/misalignment from the source to drain under the bias voltages V ds . For comparison, the output characteristics of a Si 9 H 6 -based pFET have been displayed in Figure S4 of the Supporting Information.…”

Section: Devices Transport Propertiesmentioning

confidence: 96%

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Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

Sang

Wang

et al. 2023

ACS Appl. Nano Mater.

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Two-dimensional (2D) semiconducting silicon (Si) is significant for the development of micro/nanoelectronics because of their compatibility with the current Si-based technology and the advantages common to 2D electronic materials. Here, by focusing on the kagome lattice (KL), we design a set of semiconducting 2D KL-Si for nanoscale field-effect transistor (FET) applications. First-principles calculations demonstrate that both stable geometric properties and tunable semiconducting electronic properties can be obtained for the 2D KL-Si with different thicknesses. The 2D KL-Si features electronic band gaps ranging from 2.82 to 1.36 eV as a function of increasing the layer thickness and hole/electron mobility as large as about 103 cm2·V–1·s–1. By applying the KL-Si to nanoscale FETs, we obtain giant negative differential resistances with peak-valley ratios over 107 and excellent switching performance fulfilling the requirements of the International Technology Roadmap for Semiconductors. Our study demonstrates the importance of kagome topology in the design of 2D Si crystals with excellent semiconducting properties as well as their promising application in nanoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Devices Transport Propertiesmentioning

confidence: 96%

Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

Sang

Wang

et al. 2023

ACS Appl. Nano Mater.

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Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature

Wang

Zhi

et al. 2023

Physics Reports

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High-throughput approach to explore cold metals for electronic and thermoelectric devices

Zhang,

Liu

2024

npj Comput Mater

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Cold metals with an energy gap around the Fermi level have been shown a great potential for reducing the power dissipation of transistors and diodes. However, only a limited number of 2D cold metals have been studied. In this work, we explored 3D cold metals through a systematic material search and found 252 types in the database. We performed first-principles calculations to investigate the conductance and work functions of 30 cold metals for material selection. Additionally, we studied the thermoelectric properties of four typical cold metals, which possess much larger Seebeck coefficients and figure-of-merits than conventional metals, by one and two orders of magnitude, respectively. Specifically, we constructed a monolayer MoS2 transistor with a cold metal contact of ZrRuSb. Our quantum transport simulations indicate that cold metal contacted MoS2 FETs exhibit a subthreshold swing smaller than 60 mV decade−1 over four decades, and on-state currents over 1 mA μm−1 are achieved at a supply voltage of 0.5 V. Our research provides a theoretical foundation and material basis for exploring 3D cold metals in developing electronic and thermoelectric devices.

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Cold Source Diodes With Sub-Unity Ideality Factor and Giant Negative Differential Resistance

Cited by 4 publications

References 23 publications

Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications

Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature

High-throughput approach to explore cold metals for electronic and thermoelectric devices

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