“…Recent studies of the magneto-ionic properties of single-layer thin films with structural oxygen (Co 3 O 4 ) or nitrogen (CoN) ions, present in the as-prepared thin-film state, have demonstrated that fully reversible and cyclable magnetic transitions between a nonferromagnetic (OFF) and a ferromagnetic state (ON) are indeed possible. ,, Interestingly, and in contrast to the diffusion channels observed in Co 3 O 4 , CoN films transport nitrogen via a planar ion migration front and possess both superior cyclability and lower operating voltages than Co 3 O 4 , hinting that metal nitrides may compare favorably with their metal oxide counterparts. Previous ab initio calculations of the enthalpy of formation of CoN have predicted values of ΔH f ≈ −50 kJ mol –1 , significantly higher (i.e., less negative) than experimental estimates conducted on CoO and Co 3 O 4 of ΔH f ≈ −237.9 and −910.02 kJ mol –1 , respectively. − This is consistent with the difference in electronegativity between nitrogen and oxygen: the lower electronegativity of nitrogen results in weaker bonds with Co cations, suggesting increased magneto-ionic mobility. Properly tuned FeN may be a tantalizing alternative target material for magneto-ionics, as ab initio calculations show that the enthalpy of formation of FeN is comparable to that of CoN and significantly higher (i.e., less negative) than that of FeO. , In addition, magnetic nitrides , such as Fe–N − have recently drawn significant research interest due to their array of desirable properties, including high hardness, melting point, incompressibility, cost efficiency, and greater magnetization than iron oxides, − another class of magneto-ionic target materials. ,, Iron nitrides also span a wide range of mechanical and magnetic properties, which can be tuned by varying the nitrogen concentration in Fe x N y , − and can be easily integrated with semiconductor electronics.…”