Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Baines, Yannick; Buckley, J.; Biscarrat, J.; Garnier, G.; Charles, Matthew; Vandendaele, W.; Gillot, C.; Plissonnier, M.

doi:10.1038/s41598-017-08307-0

Cited by 17 publications

(7 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Switching frequency: to allow high frequency switching, cointegration is key. Transistors, flyback diodes, rectifiers [26] or drivers [27] are examples of active devices that can be monolithically integrated to reduce parasitic elements and reach high performance converters.…”

Section: Epitaxial Lift-off Of Gan and Related Materials For Power De...mentioning

confidence: 99%

The 2018 GaN power electronics roadmap

Amano¹,

Baines²,

Borga³

et al. 2018

J. Phys. D: Appl. Phys.

936

415

View full text Add to dashboard Cite

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

show abstract

Section: Epitaxial Lift-off Of Gan and Related Materials For Power De...mentioning

confidence: 99%

The 2018 GaN power electronics roadmap

Amano¹,

Baines²,

Borga³

et al. 2018

J. Phys. D: Appl. Phys.

936

415

View full text Add to dashboard Cite

show abstract

“…In order to better understand the Hall Effect measurements, we calculated the expected 2DEG sheet carrier density as shown in Figure 9. The calculations are based on a Poisson-Fermi formalism developed based on MOS physics [11]. As expected, for pseudomorphic growth of the AlN barrier, higher Ns values are obtained as the contribution from piezoelectric polarization charges is higher.…”

Section: Figure 6: Sheet Resistance As Function Of Aln Thickness For Aln Layers Grown With Different Nh3 Partial Pressures All Layers Havmentioning

confidence: 67%

“…These Hall Effect measurements were performed on 1 x 1 cm square isolated structures, with contacts at each corner. Ns calculations were performed using a Poisson-Fermi formalism based on an analogy with MOS physics [11].…”

Section: Methodsmentioning

confidence: 99%

Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

Kanyandekwe

Baines

Favier

et al. 2019

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

In this work we have studied the growth of AlN barriers on GaN channels by Metal-Organic Vapor Phase Epitaxy (MOVPE). We have shown that an SiN in-situ capping layer is critical on AlN barrier layers. In addition, we have shown that an extreme reduction of NH3 partial pressure results in gallium incorporation into the layers around 22%. However, we have shown that lesser reductions of NH3 partial pressure allow us to achieve thin (3 nm) AlN layers capped with SiN which have a high quality crack free surface and state of the art Rsheet values < 330 Ohm/sq for such thin layers.

show abstract

“…Another approach is the transfer matrix (TM) method. This method is often used in the field of modeling semiconductor materials and optoelectronic devices as a computational method for solving the 1-dimensional Schrödinger equation. − Effective mass is also included in the Schrödinger equation describing the motion of the electron. In this method, the original potential is divided into a series of rectangular barriers, and the wavefunctions for each sliced barrier are solved.…”

Section: Introductionmentioning

confidence: 99%

Tunneling Effect in Proton Transfer: Transfer Matrix Approach

Umesaki

Odai

2023

J. Phys. Chem. A

View full text Add to dashboard Cite

The transfer matrix (TM) method was applied to calculate the transmission probability (TP) for proton transfer reactions. The tunneling factors in the reaction rate constants were also evaluated using the TPs. To test this method, TPs for the Eckart potentials modeled as a guanine–cytosine base pair were calculated by the TM method and compared to TPs by the analytical solution. As a result, the errors in the TPs by the TM method were quite small. The tunneling factors for the guanine–thymine (G-T) and adenine–cytosine (A-C) mispair reactions were then evaluated by the TM method. A shoulder appears on each potential for these reactions [Odai, K.; Umesaki,K. J. Phys. Chem. A. 2021, 125, 8196–8204]. As a result, the shoulder for the G-T mispair reaction contributes significantly to the tunneling, while the shoulder for the A-C mispair reaction contributes little to the tunneling. These results are difficult to obtain with methods such as Wigner’s tunneling factor.

show abstract

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Cited by 17 publications

References 47 publications

The 2018 GaN power electronics roadmap

The 2018 GaN power electronics roadmap

Impact of growth conditions on AlN/GaN heterostructures with in-situ SiN capping layer

Tunneling Effect in Proton Transfer: Transfer Matrix Approach

Contact Info

Product

Resources

About