Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices

Wolf, S.; Zwickel, Heiner; Kieninger, Clemens; Lauermann, Matthias; Hartmann, Wladick; Kutuvantavida, Y.; Freude, W.; Randel, Sebastian; Koos, C.

doi:10.1364/oe.26.000220

Cited by 56 publications

(32 citation statements)

References 53 publications

(72 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In contrast to that, OEO materials are widely applicable and compatible to a wide variety of integration platforms and device structures, enabling high-speed modulators with record performance parameters [23][24][25][26] and data rates of up to 400 Gbit/s [5]. The materials can be easily spin-coated, micro-dispensed or printed in high-throughput processes.…”

mentioning

confidence: 99%

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

Kieninger¹,

Kutuvantavida²,

Elder³

et al. 2018

Optica

142

100

View full text Add to dashboard Cite

Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n 3 r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest materialrelated in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vµm -the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonicelectronic signal processing.

show abstract

mentioning

confidence: 99%

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

Kieninger¹,

Kutuvantavida²,

Elder³

et al. 2018

Optica

142

100

View full text Add to dashboard Cite

show abstract

“…The modulating field (red arrows) induced by the RF drive voltage Ud is oriented parallel to the chromophore alignment in one phase modulator and antiparallel in the other phase modulator, thereby resulting in efficient chirp-free push-pull operation of the MZM. While fabrication > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 4 of SOH modulators for research experiments has relied on highresolution electron-beam lithography [36][37] [38], more recent demonstrations were based on deep-UV (DUV) lithography processes on a commercial platform, which offers the full portfolio of silicon photonic devices and SiGe detectors [39][40] [41].…”

Section: Integration With Organic Electro-optic Materialsmentioning

confidence: 99%

Heterogeneous Integration on Silicon Photonics

et al. 2018

View full text Add to dashboard Cite

To enhance the functionality of the standard silicon photonics platform and to overcome its limitations, in particular for light emission, ultrafast modulation and non-linear applications, integration with novel materials is being investigated by several groups. In this paper we will discuss, amongst others, the integration of silicon waveguides with ferroelectric materials such as PZT and BTO, with electro-optically active polymers, with 2Dmaterials such as graphene and with III-V semiconductors through epitaxy. We discuss both the technology and design aspects.

show abstract

“…IQ-modulators encode information on both real and imaginary parts of the optical carrier by utilizing two nested Mach-Zehnder modulators (MZMs). Well-established technologies rely on LiNbO3, InP, or the Silicon-Organic-Hybrid (SOH) platform [3][4][5] . However, devices based on these technologies end up with relatively large footprints (>0.5 mm long active section).…”

Section: Introductionmentioning

confidence: 99%