Heterogeneous Integration on Silicon Photonics

Marshall, Owen; Hsu, Mark J.; Wang, Zhechao; Kunert, Bernardette; Koos, C.; Thourhout, Dries Van

doi:10.1109/jproc.2018.2858542

Cited by 35 publications

(28 citation statements)

References 94 publications

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“…the 1.3 -1.55 µm spectral range historically harnessed by optical communication windows of low fiber attenuation and dispersion. To address this deficiency, rather expensive III-V compound semiconductors integrated on SOI wafers via flip-chip bonding or direct heteroexpitaxy can be used [11][12][13]. Optical TE ontroller to opti odulated signal w oupler, followed b pin photodetect mplifier (TIA) or trieved through sting, by applying f a RF probe conn F bias-tee output agrams.…”

Section: Introductionmentioning

confidence: 99%

25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

Benedikovič¹,

Virot²,

Aubin³

et al. 2019

Photon. Res.

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Near-infrared (near-IR) Germanium (Ge) photodetectors monolithically integrated on top of silicon-on-insulator (SOI) substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the high-data-rate performance pin waveguide photodetectors made of lateral hetero-structured Silicon-Germanium-Silicon (Si-Ge-Si) junction operating under low reverse bias at 1.55 µm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metaloxide-semiconductor (CMOS) technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of ~9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark-current as low as ~150 nA, allowing a superior signal detection of high-speed data traffics. A bit-error-rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps and 25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next generation nanophotonics integrated circuits.

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Section: Introductionmentioning

confidence: 99%

25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

Benedikovič¹,

Virot²,

Aubin³

et al. 2019

Photon. Res.

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“…Other new materials, including 2D materials such as graphene [185], ferroelectric materials such as lead zirconate titanate [186] and barium titanate [187], and transparent conductive oxide such as ITO [188,189], also hold great promises for compact, low-power optical modulators. Heterogeneous integration on silicon photonics involves rich physics and engineering techniques [190], which is beyond the scope of this paper. It is still an open question if and how these new materials will eventually be adopted into a silicon photonics foundry process for mass production.…”

Section: Ultracompact Low-power Devicesmentioning

confidence: 99%

Scaling capacity of fiber-optic transmission systems via silicon photonics

2020

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The tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.

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“…In addition to the full silicon approaches, huge efforts have also been witnessed in developing silicon hybrid photonic devices, which target high modulation speed as well as compact device footprint, low insertion loss and as-low-as-possible driving voltage [91,92]. These devices are demonstrated through different platforms, including hybrid organic-silicon modulators [93], hybrid graphene-silicon modulators [94], hybrid BTO silicon modulators [95], hybrid III-V silicon modulators [96], and hybrid LiNbO 3 silicon modulators [97] etc.…”

Section: Hybrid Silicon Modulatorsmentioning

confidence: 99%

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

Wang¹,

Huang²,

Chen³

et al. 2019

PIER

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Datacenters become an important part of technical infrastructure. The Datacom traffic grows exponentially to satisfy the demands in IT services, storage, communications, and networking to the growing number of networked devices and users. High bandwidth and energy efficient optical interconnects are critical to improve overall productivity and efficiency in data centers. Mega-data centers are expected to address the power consumption and the cost in which optical interconnects contribute quite a large part. Silicon photonics is a promising platform to offer savings in power and potential increase in bandwidth for Datacom. Several modulation techniques are developed in silicon photonics to reduce the optical mode volume or enhance the light matter effect to further improve the modulation efficiency. Many other materials such as III-V and LiNbO 3 are integrated on silicon photonics to maximize the optical link performance. This paper reviews several modulation techniques for Datacom, from vertical-cavity surface-emitting laser (VCSEL) direct modulation to silicon photonics modulators then to hybrid silicon modulators.

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Heterogeneous Integration on Silicon Photonics

Cited by 35 publications

References 94 publications

25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures

Scaling capacity of fiber-optic transmission systems via silicon photonics

Modulation on Silicon for Datacom: Past, Present, and Future (Invited Review)

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