2012
DOI: 10.1103/physrevb.86.035321
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Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

Abstract: A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.

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Cited by 21 publications
(30 citation statements)
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References 110 publications
(129 reference statements)
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“…In the effective mass (EM) approximation the orbital ground state electron wavefunctions of a multi-valley system with valley ξ = z,z residing in quantum dot q = l, c, r is given by [69][70][71][72][73][74][75]…”
Section: Appendix B: Molecular Orbital Analysismentioning
confidence: 99%
See 1 more Smart Citation
“…In the effective mass (EM) approximation the orbital ground state electron wavefunctions of a multi-valley system with valley ξ = z,z residing in quantum dot q = l, c, r is given by [69][70][71][72][73][74][75]…”
Section: Appendix B: Molecular Orbital Analysismentioning
confidence: 99%
“…The remaining factors describe the confinement along z-direction in a quantum well with length d R q , with z-valley position k ξ = ±k 0 in k-space. The electronic quantum dot wavefunction of a multi-valley system in the first excited orbital state can similarly be approximated by [69,70,[74][75][76][77][78][79][80].…”
Section: Appendix B: Molecular Orbital Analysismentioning
confidence: 99%
“…In a recent proposal, Wu et al [33] suggest using only the valley degree of freedom as a qubit and fix the spin degree of freedom by a strong in-plane magnetic field. Also, for Si quantum dots, the possibilities of valley-only qubit manipulation are currently under theoretical investigation [34][35][36].…”
Section: Introductionmentioning
confidence: 99%
“…Electrical tunability in the range from 0.3 to 0.8 meV was demonstrated [45]. Calculations show that while arg(V VO ) is only slightly influenced by an applied electric field [61], it depends on the conduction band offset [29]; thus, a structure with an alternating top layer material, e.g., SiO 2 and SiGe or Si 1−x Ge x with a varying x could provide the difference in arg(V VO ), i.e. ϕ = 0, which is needed in our scheme between dots I and II and between III and IV, while arg(V VO ) should be the same in dot II and IV.…”
mentioning
confidence: 98%