Coherent control of nuclear-spin system in a quantum-Hall device

Machida, Tomoki; Yamazaki, Tomoyuki; Ikushima, Kenji; Komiyama, S.

doi:10.1063/1.1539903

Cited by 94 publications

(111 citation statements)

References 11 publications

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Section: Pacs Numbers: Valid Pacs Appear Herementioning

confidence: 99%

“…[4] In AlGaAs/GaAs semiconductor devices, the ensemble of nuclear spins is often polarized by flip-flop processes of electron and nuclear spins via the hyperfine interaction. [5,6,7,8,9] By combining a pulse rf NMR technique with dynamic nuclear polarization (DNP) along spin-resolved quantum Hall (QH) edge channels, we have achieved electrical coherent manipulation of their quantum states.[6] Recently, Yusa et al [7] also demonstrated coherent manipulation of nuclear-spin ensemble using a fractional QH bulk region of Landau-level filling factor ν = 2/3, where the electron system is separated into spin-polarized and spin-unpolarized domain structures due to competition between Zeeman energy and Coulomb exchange interaction. [8,9] Their study reported multiple quantum coherence of nuclear spins.…”

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confidence: 99%

“…In the following, we manipulate 71 Ga nuclei using a pulse NMR method: [6,7,12] nuclear-spin state evolves with time during the application of B rf with pulse durations τ pulse . To measure the time evolution data, the rf pulses with different durations (0 τ pulse 300 µs) were applied at a peak-to-peak rf-voltage amplitude of V rf .…”

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Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Takahashi

Kawamura

Masubuchi

et al. 2007

Applied Physics Letters

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Using a conventional Hall-bar geometry with a micrometal strip on top of the surface, the authors demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor. PACS numbers: Valid PACS appear hereFor quantum information processing, it is essential to control quantum states without destroying their coherence. Since nuclear spins have extremely long coherence times arising from weak couplings with their environments, application of the nuclear spins as quantum bits (qubits) has been discussed. [1,2] In fact, Vandersypen et al.[3] demonstrated seven-qubit quantum computation using nuclear magnetic resonance (NMR) of liquid-state molecules. In a solid, though it is difficult to individually access and manipulate a single nuclear spin in practice, a theoretical study suggests that ensemble of nuclear spins can be utilized collectively as a long-lived quantum memory for qubits. [4] In AlGaAs/GaAs semiconductor devices, the ensemble of nuclear spins is often polarized by flip-flop processes of electron and nuclear spins via the hyperfine interaction. [5,6,7,8,9] By combining a pulse rf NMR technique with dynamic nuclear polarization (DNP) along spin-resolved quantum Hall (QH) edge channels, we have achieved electrical coherent manipulation of their quantum states.[6] Recently, Yusa et al. [7] also demonstrated coherent manipulation of nuclear-spin ensemble using a fractional QH bulk region of Landau-level filling factor ν = 2/3, where the electron system is separated into spin-polarized and spin-unpolarized domain structures due to competition between Zeeman energy and Coulomb exchange interaction. [8,9] Their study reported multiple quantum coherence of nuclear spins.In this letter, in order to dynamically polarize nuclear spins, we utilize a breakdown regime of integer QH effect of ν = 1, in which the mechanism of the DNP is clear.[10] Using a conventional Hall-bar sample made of an AlGaAs/GaAs semiconductor, we demonstrate coher- * Electronic mail: tmachida@iis.u-tokyo.ac.jp † Also at INQIE, University of Tokyo.ent manipulation of the quantum state of nuclear spins; by combining a pulse rf NMR technique with the DNP, we observe evident Rabi oscillations.A Hall-bar device we studied here was fabricated on an Al 0.35 Ga 0.65 As/GaAs single heterostructure with an electron mobility of 220 m 2 /V s and a sheet electron density of 1.6 × 10 15 m −2 . Figure 1

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Section: Pacs Numbers: Valid Pacs Appear Herementioning

confidence: 99%

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confidence: 99%

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Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Takahashi

Kawamura

Masubuchi

et al. 2007

Applied Physics Letters

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“…Electrical manipulation of individual nuclei of Ga and As has been achieved in a GaAs two-dimensional electron gas (2DEG) by taking advantage of the resistively detected nuclear magnetic resonance (RDNMR), an emerging high-sensitivity NMR technique. [2][3][4][5][6] However, all of these experiments were performed only at millikelvin temperatures. More recently, electrical detection of coherent oscillations of nuclear spins has been realized in the breakdown regime of integer quantum Hall states of the GaAs 2DEG with an operating temperature up to 1.5 K. 7 Control and monitor of spin transfer between electrons and nuclei at elevated temperatures is undoubtedly valuable for practical applications of the nuclear spin based QIP.…”

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confidence: 99%

Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature

Yang¹,

Liu

Nagase³

et al. 2011

Applied Physics Letters

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We report on the demonstration of the resistively detected nuclear magnetic resonance (RDNMR) of a single InSb two-dimensional electron gas (2DEG) at elevated temperatures up to 4 K. The RDNMR signal of 115 In in the simplest pseudospin quantum Hall ferromagnet triggered by a large direct current shows a peak-dip line shape, where the nuclear relaxation time T 1 at the peak and the dip is different but almost temperature independent. The large Zeeman, cyclotron, and exchange energy scales of the InSb 2DEG contribute to the persistence of the RDNMR signal at high temperatures.

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“…For example, for spin-selective tunneling of quantum-Hall edge channels at a tunnel barrier, spin-resolved Landau levels are required [8]. Furthermore, in the case of silicon, the lifting of the spin-valley degeneracy could play an important role in the electronic transport properties in such devices and acts as an additional degree of freedom.…”

Section: High Magnetic Field Sweepsmentioning

confidence: 99%

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

Beveren

Tan

Lai

et al. 2011

MSF

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Abstract.A common issue in low temperature measurements of enhancement-mode metal-oxidesemiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

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Coherent control of nuclear-spin system in a quantum-Hall device

Cited by 94 publications

References 11 publications

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect

Resistively detected nuclear magnetic resonance via a single InSb two-dimensional electron gas at high temperature

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

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