Fig. 1. A cross sectional schematic of the microdosimeter. Note the cylindrical nature of the design. AI sao::Abstract-The latest design in 2nd generation cylindrical SOl microdosimeters is introduced and investigated. The updated design features either a single or continuous guard ring around each cylindrical sensitive volume (SV) to prevent any unwanted lateral charge collection. Current-voltage measurements have shown that the SV of each type of guard ring device exhibits good diode characteristics. A comprehensive IDIC investigation into the charge collection properties of each updated SV confirms that each SV is a well defined cylindrical site.
Abstract.A common issue in low temperature measurements of enhancement-mode metal-oxidesemiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).
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