Coherence in single photon emission from droplet epitaxy and Stranski–Krastanov quantum dots in the telecom C-band

Anderson, Matthew; Müller, Tina; Skiba-Szymanska, J.; Krysa, A. B.; Huwer, Jan; Stevenson, R. M.; Heffernan, J.; Ritchie, D. A.; Shields, A. J.

doi:10.1063/5.0032128

Cited by 42 publications

(48 citation statements)

References 33 publications

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“…DE has been extensively explored by molecular beam epitaxy (MBE) [11][12][13][14] It is only more recently that it has been successfully applied to MOVPE, where promising results have been obtained: for instance, InAs/InP QDs grown via DE in MOVPE have been used in the first entangled quantum lightemitting diode (QLED) emitting in the telecom C-band [15] and in qubit teleportation. [17,19] Our recent study of growth conditions for DE of InAs/InP QDs demonstrated the ability to form QDs in local etched pits, [18] creating the possibility to engineer through the epitaxy process more complex and novel nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy

Sala

Godsland

Trapalis

et al. 2021

Physica Rapid Research Ltrs

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InAs quantum dots (QDs) are grown on bare InP(001) via droplet epitaxy (DE) in metal-organic vapor phase epitaxy (MOVPE). Capping layer engineering, used to control QD size and shape, is explored for DE QDs in MOVPE. The method allows for the tuning of the QD emission over a broad range of wavelengths, ranging from the O-to the L-band. The effect of varying the InP capping layer is investigated optically by macro-and micro-photoluminescence (PL, μPL) and morphologically by transmission electron microscopy (TEM). A strong 500 nm blueshift of the QD emission wavelength is observed when the capping layer is reduced from 20 to 8 nm, which is reflected by a clear size reduction of the buried QDs.

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Section: Introductionmentioning

confidence: 99%

Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy

Sala

Godsland

Trapalis

et al. 2021

Physica Rapid Research Ltrs

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“…[117] As an alternative, all of the general concepts discussed can also be adapted to different material systems, such as InGaAs QDs, whose emission wavelength can be extended to the telecom C-band. [53,103,[180][181][182] For this purpose, different memory systems for QDs emitting in the telecom C-band are developed. [155,183,184] In conclusion, combining the state-of-the-art QDs with photonic cavities, to maximize the extraction efficiency, and with the well-established tuning techniques, such as electrical or strain tuning to erase FSS and adjust the emission wavelength of the entangled photon pair, all the desirable features for an efficient entangled photon source are at hand: negligible multiphoton emission, [34] high extraction efficiency, [21] degree of entanglement, [20] photonindistinguishability, [35] wavelength-tunability, [72] with on-demand generation [37] .…”

Section: Discussionmentioning

confidence: 99%

Quantum dot technology for quantum repeaters: from entangled photon generation toward the integration with quantum memories

Neuwirth

Basset

Rota

et al. 2021

Mater. Quantum. Technol.

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The realization of a functional quantum repeater is one of the major research goals in long-distance quantum communication. Among the different approaches that are being followed, the one relying on quantum memories interfaced with deterministic quantum emitters is considered as one of the most promising solutions. In this work, we focus on the hardware to implement memory-based quantum-repeater schemes that rely on semiconductor quantum dots for the generation of polarization entangled photons. Going through the most relevant figures of merit related to efficiency of the photon source, we select significant developments in fabrication, processing and tuning techniques aimed at combining high degree of entanglement with on-demand pair generation, with a special focus on the progress achieved in the representative case of the GaAs system. We proceed to offer a perspective on integration with quantum memories, both highlighting preliminary works on natural-artificial atomic interfaces and commenting a wide choice of currently available and potentially viable memory solutions in terms of wavelength, bandwidth and noise-requirements. To complete the overview, we also present recent implementations of entanglement-based quantum communication protocols with quantum dots and highlight the next challenges ahead for the implementation of practical quantum networks.

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“…We find for the BE a T BE of 30 ps and for the DE a T DE of 48 ps. These times are extremely short compared to the radiative lifetime, and the Gaussian shape points towards an efficient spectral diffusion mechanism leading to an inhomogeneous broadening of the QD [40][41][42]. The charge noise can be attributed to the high aluminum content of the AlGaAs waveguide and the impurities in the aluminum source during the sample growth.…”

Section: Coherence Properties Of the Dark Exciton Statementioning

confidence: 99%

Emission properties and temporal coherence of the dark exciton confined in a GaAs/AlxGa1−xAs quantum dot

et al. 2021

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We report measurements of the radiative lifetimes and coherence times of the dark and bright excitons in an asymmetric GaAs/AlGaAs quantum dot. The dots, fabricated by partial infilling of asymmetric in situ etched nanoholes, have low symmetry, which leads to significant dark-bright mixing as demonstrated by dark-bright anticrossing in magnetophotoluminescence spectra. Using an orthogonal excitation-detection waveguiding geometry and quasiresonant excitation, we compare the coherence properties, measured by Michelson interferometry, of the dark and bright exciton from the same dot in the absence of an external magnetic field.

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Coherence in single photon emission from droplet epitaxy and Stranski–Krastanov quantum dots in the telecom C-band

Abstract: This is a repository copy of Coherence in single photon emission from droplet epitaxy and Stranski-Krastanov quantum dots in the telecom C-band.

Cited by 42 publications

References 33 publications

Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy

Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy

Quantum dot technology for quantum repeaters: from entangled photon generation toward the integration with quantum memories

Emission properties and temporal coherence of the dark exciton confined in a GaAs/AlxGa1−xAs quantum dot

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