Emission properties and temporal coherence of the dark exciton confined in a 
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 quantum dot

Germanis, S.; Atkinson, P.; Hostein, Richard; Majrab, Silbé; Margaillan, Florent; Bernard, M.; Voliotis, Valia; Eblé, B.

doi:10.1103/physrevb.104.115306

Cited by 3 publications

(2 citation statements)

References 47 publications

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“…However, we have already shown in Ref. [10] that in these dots the typical ratio of oscillator strengths between dark and bright pairs is ∼1:1000, even though the dark exciton luminescence signal can become comparable to the bright one under certain excitation conditions. We can exclude states where the TPE process would occur via a dark exciton virtual state, i.e., states |3 , |4 , |6 , and |7 .…”

Section: Two-photon Excitation Regime and P H -P E Transitionsmentioning

confidence: 83%

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Unveiling the spin-singlet states of two electron-hole pair complexes using two-photon excitation in a GaAs/AlAs quantum dot

Germanis

Atkinson²,

Bach³

et al. 2022

Phys. Rev. B

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We use two-photon excitation to create biexcitonic complexes with two electron-hole pairs in different orbital levels of a GaAs/AlAs quantum dot. In addition to p-shell emission of the biexcitonic triplet states generated by two-photon excitation, we observe additional higher-energy resonances which are a signature of the radiative cascade of two-photon excited singlet states. The detection of these signals obtained in a high excitation regime is made possible by the use of a waveguiding structure in which the quantum dots are inserted, allowing an orthogonal excitation and detection geometry with an excellent laser rejection.

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Section: Two-photon Excitation Regime and P H -P E Transitionsmentioning

confidence: 83%

“…1(b)]. These lines have been assigned to the neutral exciton X 0 , the dark exciton [9][10][11], the negative trion X − , and the biexciton X X 0 (see Supplemental Material [12]). Other peaks are likely to be other charged states.…”

Section: Introductionmentioning

confidence: 99%

Unveiling the spin-singlet states of two electron-hole pair complexes using two-photon excitation in a GaAs/AlAs quantum dot

Germanis

Atkinson²,

Bach³

et al. 2022

Phys. Rev. B

Self Cite

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Chirped Pulses Meet Quantum Dots: Innovations, Challenges, and Future Perspectives

Kappe,

Karli,

Wilbur

et al. 2024

Adv Quantum Tech

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Shaped laser pulses have been remarkably effective in investigating various aspects of light–matter interactions spanning a broad range of research. Chirped laser pulses exhibiting a time‐varying frequency, or quadratic spectral phase, form a crucial category in the group of shaped laser pulses. This type of pulses have made a ubiquitous presence from spectroscopic applications to developments in high‐power laser technology, and from nanophotonics to quantum optical communication, ever since their introduction. In the case of quantum technologies recently, substantial efforts are being invested toward achieving a truly scalable architecture. Concurrently, it is important to develop methods to produce robust photon sources. In this context, semiconductor quantum dots hold great potential, due to their exceptional photophysical properties and on‐demand operating nature. Concerning the scalability aspect of semiconductor quantum dots, it is advantageous to develop a simple, yet robust method to generate photon states from it. Chirped pulse excitation has been widely demonstrated as a robust and efficient state preparation scheme in quantum dots, thereby boosting its applicability as a stable photon source in a real‐world scenario. Despite the rapid growth and advancements in laser technologies, the generation and control of chirped laser pulses can be demanding. Here, an overview of a selected few approaches is presented to tailor and characterize chirped pulses for the efficient excitation of a quantum dot source. By taking the chirped‐pulse‐induced adiabatic rapid passage process in quantum dot as an example, numerical design examples are presented along with experimental advantages and challenges in each method and conclude with an outlook on future perspectives.

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Enhancement of Spontaneous Photon Emission in Inverse Photoemission Transitions in Semiconductor Quantum Dots

Spanedda,

Martin,

Mesta

et al. 2024

J. Phys. Chem. Lett.

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Inverse photoemission (IPE) is a radiative electron capture process where an electron is transiently captured in the conduction band (CB) followed by intraband deexcitation and spontaneous photon emission. IPE in quantum dots (QDs) bypasses optical selection rules for populating the CB and provides insights into the capacity for electron capture in the CB, the propensity for spontaneous photon emission, intraband transition energies where both initial and final states are in the CB, and the generation of photons with frequencies lower than the bandgap. Here, we demonstrate using time-dependent perturbation theory that judicious application of electric fields can significantly enhance the IPE transition in QDs. For a series of CdSe, CdS, PbSe, and PbS QDs, we present evidence of field-induced enhancement of IPE intensities (188% for Cd 54 Se 54 ), field-dependent control of emitted photon frequencies (Δω = 0.73 eV for Cd 54 Se 54 ), and enhancement of light−matter interaction using directed Stark fields (103% for Cd 54 Se 54 ).

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Emission properties and temporal coherence of the dark exciton confined in a GaAs/AlxGa1−xAs quantum dot

Cited by 3 publications

References 47 publications

Unveiling the spin-singlet states of two electron-hole pair complexes using two-photon excitation in a GaAs/AlAs quantum dot

Unveiling the spin-singlet states of two electron-hole pair complexes using two-photon excitation in a GaAs/AlAs quantum dot

Chirped Pulses Meet Quantum Dots: Innovations, Challenges, and Future Perspectives

Enhancement of Spontaneous Photon Emission in Inverse Photoemission Transitions in Semiconductor Quantum Dots

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