2014
DOI: 10.1016/j.matlet.2014.05.100
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Coexistent structures and film growth in vanadium oxides films

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Cited by 2 publications
(2 citation statements)
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“…These binding energy values correspond to the V 3 þ (515.2 eV and 524.1 eV) and V 4 þ (516.7 eV and 525.7 eV) states and virtually do not differ from those reported in Ref. [20,21]. The O1s peak at binding energy 531.7 eV corresponds to the O 2 À ions in vanadium oxides [20].…”
Section: Resultssupporting
confidence: 56%
See 1 more Smart Citation
“…These binding energy values correspond to the V 3 þ (515.2 eV and 524.1 eV) and V 4 þ (516.7 eV and 525.7 eV) states and virtually do not differ from those reported in Ref. [20,21]. The O1s peak at binding energy 531.7 eV corresponds to the O 2 À ions in vanadium oxides [20].…”
Section: Resultssupporting
confidence: 56%
“…[20,21]. The O1s peak at binding energy 531.7 eV corresponds to the O 2 À ions in vanadium oxides [20]. The XPS spectrum of the XG10 sample was fitted, assuming that the sample contains only V 4 þ ions (VO 2 phase according to XRD).…”
Section: Resultsmentioning
confidence: 99%