Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

Konaka, Yohei; Ono, K.; Terai, Yoshikazu; Fujiwara, Yoshihiro

doi:10.1016/j.jcrysgro.2010.03.038

Cited by 14 publications

(6 citation statements)

References 34 publications

(65 reference statements)

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“…42 Konaka et al similarly discuss the slight suppression of phase-separation in InGaAsP at 630 C in the presence of ordering. 43 This can be understood by introducing the sub-surface strain energy from the dimerization process into the free energy term used to calculate the miscibility gap. Our experiments showing both phaseseparation and ordering at 650 C imply that the miscibility gap was not lowered enough by ordering.…”

Section: Cupt-b Orderingmentioning

confidence: 99%

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Mukherjee

Beaton

Christian

et al. 2013

Journal of Applied Physics

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Articles you may be interested inEffects of doping and grading slope on surface and structure of metamorphic InGaAs buffers on GaAs substrates Direct-bandgap InAlP alloy has the potential to be an active material in nitride-free yellow-green and amber optoelectronics with applications in solid-state lighting, display devices, and multi-junction solar cells. We report on the growth of high-quality direct-bandgap InAlP on relaxed InGaAs graded buffers with low threading dislocation densities. Structural characterization reveals phase-separated microstructures in these films which have an impact on the luminescence spectrum. While similar to InGaP in many ways, the greater tendency for phase separation in InAlP leads to the simultaneous occurrence of compositional inhomogeneity and CuPt-B ordering. Mechanisms connecting these two structural parameters are presented as well as results on the effect of silicon and zinc dopants on homogenizing the microstructure. Spontaneous formation of tilted planes of phase-separated material, with alternating degrees of ordering, is observed when InAlP is grown on vicinal substrates. The photoluminescence peak-widths of these films are actually narrower than those grown on exact (001) substrates. We find that, despite phase-separation, ordered direct-bandgap InAlP is a suitable material for optoelectronics. V C 2013 AIP Publishing LLC.

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Section: Cupt-b Orderingmentioning

confidence: 99%

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Mukherjee

Beaton

Christian

et al. 2013

Journal of Applied Physics

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“…Atomic ordering was evaluated by TED 24) measurement for selected areas of InGaP layers as shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

Effects of substrate miscut on the properties of InGaP solar cells grown on GaAs(001) by solid-source molecular beam epitaxy

Oshima

Nagato

Okano

et al. 2017

Jpn. J. Appl. Phys.

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The growth of ternary InGaP alloys is often susceptible to atomic ordering, which leads to an anomalous bandgap reduction as well as the formation of antiphase boundaries (APBs). The effect of substrate miscut on the performance of lattice-matched In0.52Ga0.48P solar cells grown on GaAs(001) substrates by solid-source molecular beam epitaxy (SS-MBE) is investigated. A B-type miscut enhanced single-variant atomic ordering even with SS-MBE, resulting in a bandgap (Eg) reduction from 1.87 eV for an alloy grown on an exact substrate to 1.85 eV for that grown on the substrate miscut 6° toward (111)B. Conversely, an A-type miscut suppressed the formation of atomic ordering, resulting in the Eg widening of the alloy grown on the substrate miscut 6° toward (111)A to 1.89 eV. With regard to solar cell performance, InGaP solar cells grown on A-type miscut substrates enhanced the open-circuit voltage (VOC) and WOC (= Eg/q − VOC) because of the low degree of atomic ordering. Large improvements in WOC and efficiency to 0.58 V and 10.93%, respectively, were obtained for the cell grown on the substrate miscut 2° toward (111)B. A reduction in the number of APBs due to single-variant atomic ordering was related to this latter result.

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“…Using XRD, we confirmed the As content y was 0.43 for all cells, because the difference in the adsorption efficiencies of P 2 and As 2 in the temperature range used here was negligible. 22) Figure 4 plots the following parameters of the In 0.81 Ga 0.19 As 0.43 P 0.57 solar cells as a function of T InGaAsP : η, short circuit current density (J SC ), open circuit voltage (V OC ), fill factor (FF), and integral PL intensity at RT. Although roughly identical J SC and FF values of 36 mA=cm 2 and 0.62, respectively, were obtained for all cells, the V OC was strongly affected by T InGaAsP .…”

Section: Resultsmentioning

confidence: 99%

“…By contrast, the reduction in V OC for the cell grown at 450 °C is presumably attributed to an increase in local compositional fluctuations. The studies on In x Ga 1−x As y P 1−y thin films grown by liquid phase epitaxy, 23,24) MOCVD 22) and gas-source MBE 25) argue that the films tend to increase both lateral and vertical compositional modulations owing to surface undulation and=or phase separation.…”

Section: Resultsmentioning

confidence: 99%

MBE-grown InGaAsP solar cells with 1.0 eV bandgap on InP(001) substrates for application to multijunction solar cells

Oshima

Makita

Mizuno

et al. 2015

Jpn. J. Appl. Phys.

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In this study, we have developed the first ever solid-source molecular beam epitaxy (SS-MBE)-grown In0.81Ga0.19As0.43P0.57/In0.47Ga0.53As dual-junction solar cells grown on InP substrates with a 1.0/0.7 eV bandgap for use in mechanically stacked multijunction solar cells. We studied the adsorption efficiencies of As2 and P2 to determine the optimal parameters for the growth of lattice-matched In0.81Ga0.19As0.43P0.57 by SS-MBE. The adsorption efficiency of As2 was found to be seven times greater than that of P2, and lattice-matched In0.81Ga0.19AsyP1−y (y = 0.43) can be achieved at a PAs/(PP + PAs) ratio of ∼0.10. Then, we studied the effect of growth temperature on the characteristics of lattice-matched In0.81Ga0.19As0.43P0.57 single-junction solar cells. The open-circuit voltage (VOC) was found to be greatly affected by the growth temperature, and the highest VOC = 0.47 V (efficiency η = 10.5%) was obtained for cells grown at 440 °C. On the other hand, photoluminescence intensity measured for these cells at room temperature monotonically increased with an increase in the growth temperature, which implies that the reduction in VOC for the cells grown at 400 and 420 °C was due to the increase in the intrinsic defects and unexpected contaminations. By contrast, the reduction in VOC for the cell grown at 450 °C is presumably attributed to an increase in local compositional fluctuations. We integrated the abovementioned In0.81Ga0.19As0.43P0.57 top cell with the In0.47Ga0.53As bottom cell and an η of 3.7% was obtained using an 880-nm-long pass filter.

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Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

Cited by 14 publications

References 34 publications

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

Effects of substrate miscut on the properties of InGaP solar cells grown on GaAs(001) by solid-source molecular beam epitaxy

MBE-grown InGaAsP solar cells with 1.0 eV bandgap on InP(001) substrates for application to multijunction solar cells

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