Coexistence of ultra-long spin relaxation time and coherent charge transport in organic single-crystal semiconductors

Tsurumi, Junto; Matsui, Hiroyuki; Kubo, Takayoshi; Häusermann, Roger; Mitsui, Chikahiko; Okamoto, Toshihiro; Watanabe, Shun; Takeya, Jun

doi:10.1038/nphys4217

Cited by 143 publications

(149 citation statements)

References 31 publications

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“…Note that the exponent q in the power law of temperature dependence, μ ∝ T q , is estimated to be q = −0.83 ± 0.04, which is almost identical to that previously observed for C 8 -DNBDT-NW 34 . This gives confidence that at least in this temperature regime, band-like transport is realized 33,34 . At temperatures down from 215 K, the noise amplitude increases remarkably, while the mobility rapidly diminishes (Fig.…”

Section: Resultssupporting

confidence: 68%

“…The first attempt in this work is to identify the origin of noise in the state-of-the-art organic single-crystalline semiconductor C 8 -DNBDT-NW, where the charge carrier undergoes coherent band-like transport. The band-like carrier transport in the present single crystal form of C 8 -DNBDT-NW was unambiguously verified by the Hall effect measurements and electron spin resonance spectroscopy 33,34 . Previous studies about the 1/f noise in disordered organic semiconductors have revealed that the 1/f noise in I D originates mainly from carrier number fluctuation (δn), i.e., δI ∝ e(δn)μ [23][24][25][26] , which is referred to as McWhorter's model (see "Methods" section) 35,36 .…”

Section: Resultsmentioning

confidence: 73%

“…Linear and saturation mobilities are found to be identical and show a clear plateau at high gate voltage (V G ) regime (see Supplementary Fig. 2), which is an indicative of coherent band-like transport 8,33,34 .…”

Section: Resultsmentioning

confidence: 81%

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Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

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Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm 2 V −1 s −1 ) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the noise feature will be indispensable to further improve the circuit stability and durability. Here we performed noise measurements in solution-processed organic single crystal transistors, and discovered that a low trap density-of-states due to the absence of structural disorder in combination with coherent band-like transport gives rise to an unprecedentedly low flicker noise. The excellent noise property in organic single crystals will allow their potential to be fully exploited for high-speed communication and sensing applications.

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Section: Resultssupporting

confidence: 68%

Section: Resultsmentioning

confidence: 73%

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Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

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“…We demonstrate that substitution of a lower gyromagnetic ratio nucleus (e. g. D, Cl) on the para-position of the aryl rings in the triphenylmethyl (TM) radical can significantly improve their coherence times (T m ). [13] Sirringhaus et al systematically studied the spin-orbit coupling effect and spin relaxation mechanisms in OSCs. More importantly, using the TM radical derivative (5CM), we observed room-temperature quantum coherence and Rabi cycles in thin film for the first time, suggesting that organic conjugated radicals have great potentials for spin-based information processing.…”

mentioning

confidence: 99%

“…[11,12] The electron spin relaxation can be assigned into two aspects: the exchange of energy with the spin's environment (the 'lattice') which is characterized by the spin-lattice relaxation time (T 1 ) and spin dephasing which is characterized by the coherence time (T m ). [13] Sirringhaus et al systematically studied the spin-orbit coupling effect and spin relaxation mechanisms in OSCs. Recently, Takeya et al reported the coexistence of ultra-long spin lifetimes and coherent charge transport in organic single-crystal semiconductor.…”

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confidence: 99%

Chemical Modification toward Long Spin Lifetimes in Organic Conjugated Radicals

et al. 2018

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Organic semiconductors for spin-based devices require long spin relaxation times. Understanding their spin relaxation mechanisms is critical to organic spintronic devices and applications for quantum information processing. However, reports on the spin relaxation mechanisms of organic conjugated molecules are rare and the research methods are also limited. Herein, we study the molecular design and spin relaxation mechanisms by systematically varying the structure of a conjugated radical. We found that solid-state relaxation times of organic materials are largely different from that in solution state. We demonstrate that substitution of a lower gyromagnetic ratio nucleus (e. g. D, Cl) on the para-position of the aryl rings in the triphenylmethyl (TM) radical can significantly improve their coherence times (T ). Flexible thin films based on such radicals exhibit ultra-long spin-lattice relaxation times (T ) up to 35.6(6) μs and T up to 1.08(4) μs under ambient conditions, which are among the longest values in films. More importantly, using the TM radical derivative (5CM), we observed room-temperature quantum coherence and Rabi cycles in thin film for the first time, suggesting that organic conjugated radicals have great potentials for spin-based information processing.

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Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Coexistence of ultra-long spin relaxation time and coherent charge transport in organic single-crystal semiconductors

Cited by 143 publications

References 31 publications

Remarkably low flicker noise in solution-processed organic single crystal transistors

Remarkably low flicker noise in solution-processed organic single crystal transistors

Chemical Modification toward Long Spin Lifetimes in Organic Conjugated Radicals

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

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