Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode

Tucker, R.S.; Taylor, A.; Burrus, C.A.; Eisenstein, G.; Wiesenfeld, J. M.

doi:10.1049/el:19860625

Cited by 44 publications

(13 citation statements)

References 6 publications

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“…The circles in Fig. 1 show the performance of reported VPD's aiming at a large bandwidth-efficiency product [8]- [11]. The possible bandwidth-efficiency product ranges from 20 to 35 GHz.…”

Section: A Bandwidth-efficiency Tradeoffmentioning

confidence: 99%

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Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

316

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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“…The circles in Fig. 1 show the performance of reported VPD's aiming at a large bandwidth-efficiency product [8]- [11]. The possible bandwidth-efficiency product ranges from 20 to 35 GHz.…”

Section: A Bandwidth-efficiency Tradeoffmentioning

confidence: 99%

“…From (8) to (10), one can deduce the relationship among , , and as (11) In the case of , the above relationship is plotted with as a parameter together with the calculated by (1) in Fig. 5.…”

Section: Distributed Pd'smentioning

confidence: 99%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

316

127

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“…'Connectors are available with bandwidths of 50 GHz (APC-2.4) and 60 GHz (APC-1 .S), so that broad-band coaxial mounts could be designed to higher frequencies. Indeed, with a measurement technique (electrooptic sampling) that does not include the effects of a biasing circuit, 3-dB response to 67 GHz has been observed for one of these detectors in the K-connector mount [38].…”

Section: Structure and Packaging Considerationsmentioning

confidence: 99%

“…13(b)) [38], [42], [43]. In this case, the detector is connected to a stripline and a portion of the signal that excites the detector also passes through a bulk eiectrooptic modulator.…”

Section: Structure and Packaging Considerationsmentioning

confidence: 99%

Ultrawide-band long-wavelength p-i-n photodetectors

Bowers

Burrus

1987

J. Lightwave Technol.

339

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We compare different designs for very high-speed (millimeter-wave) long-wavelength photodetectors, different materials for such detectors, and different ways of characterizing the speed of these devices. Experimental results are given, showing high-speed response with bandwidths beyond 50 GHz, impulse responses less than 10 ps, and detection sensitivities to 0.1 fJ in packaged devices. Discussed is the inherent bandwidth-efficiency limit in conventional p-i-n detectors, which is then compared to theoretical and experimental results for waveguide-geometry detectors.

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“…Even for high-speed devices operating well below 100 GHz, packaging without performance degradation poses a major problem [1]- [3]. In conventional device package modules, the device substrate is different from the package substrate.…”

Section: Introductionmentioning

confidence: 99%

Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

Royter

Furuta

Ksdama³

et al. 2000

IEEE Electron Device Lett.

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Hybrid packaging techniques, in which the device substrate is different from the package substrate, and wire bonding or solder interconnections are used, are inadequate for ultrahigh-speed ( 100 GHz) wideband applications. By employing wafer-bonding techniques, integrated packaging (IP) technology was developed, in which devices are fabricated directly on the package substrate, and the interconnections are made as a part of the device fabrication process. This IP process was used to fabricate uni-traveling-carrier photodiodes (UTC-PD's) integrated with millimeter-wave coplanar waveguides (CPW) on package compatible sapphire with high yield. The performance of wafer-bonded UTC-PD's with 3-dB bandwidth of 102 GHz was similar to that of conventional devices, and the CPW's exhibited low dispersion.

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Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode

Cited by 44 publications

References 6 publications

Ultrawide-band/high-frequency photodetectors

Ultrawide-band/high-frequency photodetectors

Ultrawide-band long-wavelength p-i-n photodetectors

Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

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