Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu3In5Te9-based chalcogenides

In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For this reason, to optimize ions migration paths in the dielectric layer itself in the Al/CuxS/Cu structure, uniform CuxS nanosheets films have been synthesized using anodization for various time spans. And the Al/CuxS/Cu devices show a low operating voltage of less than 0.3 V and stable RS performance. At the same time, a reversible negative differential resistance (NDR) behavior is also demonstrated. And then, the mechanism of repeatable coexistence of RS effect and NDR phenomenon is investigated exhaustively. Analyses suggest that the combined physical model of space-charge limited conduction (SCLC) mechanism and conductive filaments bias-induced migration of Cu ions within the CuxS dielectric layer is responsible for the RS operation, meanwhile, a Schottky barrier caused by copper vacancy at the CuxS/Cu interface is demonstrated to explain the NDR phenomenon. This work will develop a new way to optimize the performance of non-volatile memory with multiple physical attributes in the future.

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Molecular Insight into the Deformation of Single Crystal Copper Loaded by High-Speed Shock Wave

Zhang

Fang

Meng

et al. 2021

Metals

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Molecular dynamics simulations were performed to study the evolution of single crystal copper with and without a nanovoid (located at the middle of crystal with a diameter of ~2.9 nm) when loaded with shock waves of different velocities. The simulation results show that the average particle velocity of single crystal copper linearly relates to the velocity of the loaded shock wave for both the systems (crystal with and without a nanovoid). When loaded by the shock wave, the equilibrated temperature and pressure of the system with a nanovoid are found to be slightly larger than those of the system without the nanovoid, while the volume of the system with the nanovoid is found to be lower than that of the void-free system. The single crystal copper undergoes a phase transition from face-centered cubic (FCC) to hexagonal-close packed (HCP) and a dislocation structure forms around the nanovoid. The existence of a nanovoid can induce the rearrangement and deformation of the crystalline structure and eventually lead to the plastic deformation of the system. This work provides molecular-level insight into the effect of nanovoids on the shock plasticity of metals, which can aid in the ultimate application of the control of material structure damage in shock-wave propagation.

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Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu₃In₅Te₉-based chalcogenides

Abstract: Co-regulation of both the copper vacancy concentration (Vc) and point defect GaIn realizing the high carrier concentration and low lattice thermal conductivity in Cu3In5Te9-based chalcogenides simultaneously.

Cited by 3 publications

References 48 publications

Cation vacancy related crystal structure and bandgap and their effects on the thermoelectric performance of Cu-ternary systems Cu_3+δIn₅Te₉ (δ = 0–0.175)

Cation vacancy related crystal structure and bandgap and their effects on the thermoelectric performance of Cu-ternary systems Cu_3+δIn₅Te₉ (δ = 0–0.175)

Cu _x S nanosheets with controllable morphology and alignment for memristor devices

Molecular Insight into the Deformation of Single Crystal Copper Loaded by High-Speed Shock Wave

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Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu3In5Te9-based chalcogenides

Abstract: Co-regulation of both the copper vacancy concentration (Vc) and point defect GaIn realizing the high carrier concentration and low lattice thermal conductivity in Cu3In5Te9-based chalcogenides simultaneously.

Cited by 3 publications

References 48 publications

Cation vacancy related crystal structure and bandgap and their effects on the thermoelectric performance of Cu-ternary systems Cu3+δIn5Te9 (δ = 0–0.175)

Cation vacancy related crystal structure and bandgap and their effects on the thermoelectric performance of Cu-ternary systems Cu3+δIn5Te9 (δ = 0–0.175)

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Molecular Insight into the Deformation of Single Crystal Copper Loaded by High-Speed Shock Wave

Contact Info

Product

Resources

About

Co-regulation of the copper vacancy concentration and point defects leading to the enhanced thermoelectric performance of Cu₃In₅Te₉-based chalcogenides

Cation vacancy related crystal structure and bandgap and their effects on the thermoelectric performance of Cu-ternary systems Cu_3+δIn₅Te₉ (δ = 0–0.175)

Cation vacancy related crystal structure and bandgap and their effects on the thermoelectric performance of Cu-ternary systems Cu_3+δIn₅Te₉ (δ = 0–0.175)

Cu _x S nanosheets with controllable morphology and alignment for memristor devices