Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology

Pekarik, John J.; Adkisson, J.; Camillo-Castillo, Renata; Cheng, Peng; DiVergilio, Adam W.; Gray, P.; Jain, Vibhor; Kaushal, Vikas; Khater, Marwan; Liu, Qizhi; Harame, D.L.

doi:10.1109/bctm.2012.6352651

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…In recent years, SiGe heterojunction bipolar transistors (HBTs) have undergone rapid growth because of their high speed, high driving power, and low noise, and they have been applied to fields such as wireless communication, analog circuit, fast data acquisition, and conversion. [1][2][3] Small-signal equivalent circuit models, such as the lumped SGP, VBIC, HICUM, and Mextram, are often used to characterize transistor performance, optimize the device structure, and guide circuit design. [4][5][6] However, bipolar transistors are actually large distributed networks that are composed of a basic resistance and capacitance, and their design is not always as easy as described in the above lumped models.…”

Section: Introductionmentioning

confidence: 99%

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Sun¹,

Li²,

Zhang³

et al. 2017

Chinese Phys. B

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In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.

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Section: Introductionmentioning

confidence: 99%

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Sun¹,

Li²,

Zhang³

et al. 2017

Chinese Phys. B

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“…The transistor is derived from the HBT in IBM's 130nm SiGe BiCMOS8HP (8HP) technology [6] and employs vertical and selective lateral scaling along with a self-aligned emitterbase junction. A medium-breakdown npn HBT having f T = 135GHz, f MAX = 350GHz and BV CEO = 2.5V, shares the same transistor structure with modified collector implants [7]. Five n/p MOS transistor pairs from IBM's 90nm low-power CMOS offer choices to circuit designers ranging from n-channel FETs with f T = 145GHz to 3.3V-tolerant FETs.…”

Section: Introductionmentioning

confidence: 99%

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Pekarik

Adkisson

Gray

et al. 2014

2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f T and 360 GHz f MAX high performance SiGe HBTs, 135 GHz f T and 2.5V BV CEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.

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Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors

Chakraborty

Cressler

2014

Hot Carrier Degradation in Semiconductor Devices

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Co-integration of high-performance and high-breakdown SiGe HBTs in a BiCMOS technology

Cited by 7 publications

References 5 publications

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors

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