Co-harvesting Light and Mechanical Energy Based on Dynamic Metal/Perovskite Schottky Junction

Hao, Zhenzhen; Jiang, Tingming; Lu, Yanghua; Feng, Sirui; Shen, Runjiang; Yao, Tingting; Yan, Yanfei; Yang, Yang; Lu, Yangfan; Lin, Shisheng

doi:10.1016/j.matt.2019.05.003

Cited by 86 publications

(83 citation statements)

References 30 publications

(39 reference statements)

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“…Poly(3hexylthiophene) (P3HT), a kind of p-type semiconductor, was utilized with ZnO NRs to fabricate a hybrid photoanode that demonstrated a high photoconversion efficiency and stability [119]. Schottky junction devices are considered as an excellent candidate for photodetectors due to its supersensitive and ultrafast response, low power consumption, vertical structure, and ease in fabrication [120]- [123]. For example, a one-dimensional (1D) patterned polymer with donor-acceptor configuration was employed in organic photodetectors, which demonstrated excellent optoelectronic performances with a high on/off ratio and responsivity [124].…”

Section: A Photodetectormentioning

confidence: 99%

“…Therefore, by increasing the surface states, the current density was further improved to 2.7 × 10 5 A• m -2 because the carriers were accelerated due to the large atomic electric field and the reflecting direction was regulated by the built-in electric field [144]. These Schottky junction-based energy harvesters require no additional rectification circuit and favors the miniaturization and integration of the electronic devices, providing a new route for the self-powered devices and mechanical sensors [123]. Introduction of soft polymeric materials into energy harvesters will enable higher electric output and broaden their applications in flexible devices [79], [145], [146].…”

Section: B Energy Harvestermentioning

confidence: 99%

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Device Based on Polymer Schottky Junctions and Their Applications: A Review

Suo

Zhou

et al. 2020

IEEE Access

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Polymeric materials are emerging as an important component for organic electronics due to their combined features of soft materials and organic semiconductor/conductor. Different from solid-state bulk materials, polymers are synthesized and modulated with a facile method, with their controllable properties. Therefore, polymers have been recently used in Schottky junction devices that demonstrate features of enhanced performances, flexibility, and easy processing. Polymer-based Schottky junctions have drawn a lot of interest in several prototype applications like photodetectors, energy harvesters, and gas sensors. With this review, we summarize recent progress in synthesis and modulation of polymers and fabrication of polymer-based Schottky junction devices. Designs of applications of sensory devices like photodetectors, energy harvesters, and gas sensors are also presented.

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Section: A Photodetectormentioning

confidence: 99%

Section: B Energy Harvestermentioning

confidence: 99%

Device Based on Polymer Schottky Junctions and Their Applications: A Review

Suo

Zhou

et al. 2020

IEEE Access

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“…However, conventional TENGs usually use organic polymer insulation materials, and the charges generated by friction tends to accumulate on the surface of the material, resulting in an alternating output . Recently, semiconductor materials began to attract researchers' interest, and a series of work has made great progress: the tribotunneling nanogenerator based on sliding metal–insulator–semiconductor (MIS) structure, the moving Schottky diode based on metal–semiconductor (MS) structure, the triboelectric cell based on PN junction structure, and other moving heterojunction nanogenerator . Thundat and Liu et al realized an ultrahigh current density MIS nanogenerator due to quantum mechanical tunneling of the ultrathin natural oxide layer .…”

Section: Introductionmentioning

confidence: 99%

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Zhang

Jiang

Zhao

et al. 2020

Advanced Energy Materials

135

185

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The triboelectric nanogenerator (TENG) is a new energy technology that is enabled by coupled contact electrification and electrostatic induction. The conventional TENGs are usually based on organic polymer insulator materials, which have the limitations and disadvantages of high impedance and alternating output current. Here, a tribovoltaic effect based metal–semiconductor direct‐current triboelectric nanogenerator (MSDC‐TENG) is reported. The tribovoltaic effect is facilitated by direct voltage and current by rubbing a metal/semiconductor on another semiconductor. The frictional energy released by the forming atomic bonds excites nonequilibrium carriers, which are directionally separated to form a current under the built‐in electric field. The continuous average open‐circuit voltage (10–20 mV), short‐circuit direct‐current output (10–20 µA), and low impedance characteristic (0.55–5 kΩ) of the MSDC‐TENG can be observed during relative sliding of the metal and silicon. The working parameters are systematically studied for electric output and impedance characteristics. The results reveal that faster velocity, larger pressure, and smaller area can improve the maximum power density. The internal resistance is mainly determined by the velocity and the electrical resistance of semiconductor. This work not only expands the material candidates of TENGs from organic polymers to semiconductors, but also demonstrates a tribovoltaic effect based electric energy conversion mechanism.

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“…Recently, we have designed the creative systematic design of dynamic Schottky diodes, in which the sliding of metals over semiconductors can produce a direct-current electricity output [19][20][21]. Some similar phenomena based on semiconductors have also been dedicated to converting mechanical energy into electricity, which they attribute to the triboelectricity effect [22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

“…Some similar phenomena based on semiconductors have also been dedicated to converting mechanical energy into electricity, which they attribute to the triboelectricity effect [22][23][24][25][26]. In particular, we have proposed the physical picture of the dynamic Schottky diode based on the rebounding effect under the ultrahigh built-in electric field at the interface, which can break the balance between the drift current and diffusion current and generate an electrical output [19,20]. The mechanism of the direct-current generator based on dynamic junctions should be thoroughly explored in the improvement of its performance.…”

Section: Introductionmentioning

confidence: 99%

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Feng

Shen

et al. 2019

Research

Self Cite

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Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m2, power density of 201.0 W/m2, and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.

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Co-harvesting Light and Mechanical Energy Based on Dynamic Metal/Perovskite Schottky Junction

Cited by 86 publications

References 30 publications

Device Based on Polymer Schottky Junctions and Their Applications: A Review

Device Based on Polymer Schottky Junctions and Their Applications: A Review

Tribovoltaic Effect on Metal–Semiconductor Interface for Direct‐Current Low‐Impedance Triboelectric Nanogenerators

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

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