Co-GISAXS technique for investigating surface growth dynamics

Rainville, Meliha G.; Wagenbach, Christa; Ulbrandt, Jeffrey G.; Narayanan, Suresh; Sandy, Alec; Zhou, Hua; Headrick, Randall L.; Ludwig, Karl

doi:10.1103/physrevb.92.214102

Cited by 13 publications

(9 citation statements)

References 39 publications

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“…The power law behavior in low q conforms to fractal growth [5], and the Gaussian tail in high q ranges has been observed in previous experiments [23]. As discussed in Ref.…”

Section: Discussionsupporting

confidence: 84%

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Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence

Wang¹,

Ludwig²,

Wagenbach³

et al. 2021

Preprint

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We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi2 sputter deposition. The kinetic and dynamic properties are examined as a function of pressure, which is known to be a critical factor in determining final surface roughness. Surface growth kinetics and dynamics are characterized by time parameters extracted from the height-height structure factor and correlation functions. The roughness at a given length scale reaches a maximum before relaxing down to a steady state. The lateral length scale dependence and pressure dependence are then compared among measured kinetics and dynamics time parameters. Surfaces grown at lower pressures are smoother, leading to longer correlation times. The time to reach a dynamic steady state and a kinetic steady state show contrasting pressure dependence. A dynamic steady state is reached earlier than the kinetic steady state at high pressure. A more random deposition direction and lower kinetic energy at higher pressures can explain these phenomena, along with the hypothesis that larger nanoclusters form in vapor before arriving at the surface. A continuum model is applied to simulate the overall behavior with mixed success.

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“…The power law behavior in low q conforms to fractal growth [5], and the Gaussian tail in high q ranges has been observed in previous experiments [23]. As discussed in Ref.…”

Section: Discussionsupporting

confidence: 84%

“…1 and the detector is in the yz-plane. When surface features are not too high, the intensity I(q, t) on the Yoneda wing is approximately proportional to the square modulus of the Fourier transformation of the surface height [23], i.e., I(q, t) ∝ S(q, t), where the height-height structure factor S(q, t) is defined as…”

Section: Discussionmentioning

confidence: 99%

Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence

Wang¹,

Ludwig²,

Wagenbach³

et al. 2021

Preprint

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“…To verify our hypothesis and gain more insight into the mechanisms at play, we performed a series of in situ x-ray diffraction experiments during growth of the model PTO/BTO system at the 4-D beamline at the NSLS-II synchrotron at BNL. These kinds of experiments are a powerful tool for gaining insight in to thin film growth in general [27][28][29][30][31][32][33] and more specifically the evolution of polarization and domain structure in growing ferroelectric films 10,16,22,34 . Figure 4c shows the calculated polarization from Eq.…”

Section: Resultsmentioning

confidence: 99%

Role of ferroelectric polarization during growth of highly strained ferroelectric materials

et al. 2020

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In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure. Here we show that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. This is studied by focusing on the properties of BaTiO 3 thin films grown on very thin layers of PbTiO 3 using x-ray diffraction, piezoforce microscopy, electrical characterization and rapid insitu x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. This motivates the concept of polarization engineering as a complementary approach to strain engineering.

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“…On the other hand, the compressed exponent observed for the large crystallites points towards a second mechanism. Compressed exponential behaviour has been observed in sputter deposition of amorphous thin films 34 and in crystallization of metallic glasses 35 . This behaviour has been related to the nonlinearities in Kardar-Parisi-Zhang (KPZ) model of interfacial growth processes and scaling behaviour due to side-ways or lateral growth 36,37 .…”

Section: Discussionmentioning

confidence: 99%

Dynamics at the crystal-melt interface in a supercooled chalcogenide liquid near the glass transition

Jangid

Zhu

et al. 2020

Sci Rep

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Direct quantitative measurements of nanoscale dynamical processes associated with structural relaxation and crystallization near the glass transition are a major experimental challenge. these type of processes have been primarily treated as macroscopic phenomena within the framework of phenomenological models and bulk experiments. Here, we report x-ray photon correlation spectroscopy measurements of dynamics at the crystal-melt interface during the radiation induced formation of Se nano-crystallites in pure Se and in binary AsSe 4 glass-forming liquids near their glass transition temperature. We observe a heterogeneous dynamical behaviour where the intensity correlation functions g 2 (q, t) exhibits either a compressed or a stretched exponential decay, depending on the size of the Se nano-crystallites. the corresponding relaxation timescale for the AsSe 4 liquid increases as the temperature is raised, which can be attributed to changes in the chemical composition of the melt at the crystal-melt interface with the growth of the Se nano-crystallites.

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Co-GISAXS technique for investigating surface growth dynamics

Cited by 13 publications

References 39 publications

Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence

Early Stage Growth of Amorphous Thin Film: Average Kinetics, Nanoscale Dynamics and Pressure Dependence

Role of ferroelectric polarization during growth of highly strained ferroelectric materials

Dynamics at the crystal-melt interface in a supercooled chalcogenide liquid near the glass transition

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