CO dissociation on K-modified Cu(1 1 2) and Cu(1 1 7)

Bech, Lone; Onsgaard, J.; Hoffmann, S. V.; Godowski, P. J.

doi:10.1016/s0039-6028(01)00739-7

Cited by 15 publications

(12 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[130][131][132][133][134][135][136] There are numerous examples from adsorption studies that demonstrate interfaces in which hybridization between adsorbate and substrate electronic states gives rise to distinct interface states. Work done between the 1970s and present day has provided many examples of such interfaces, involving small organic molecules on metals, 131,132,134,[136][137][138][139][140][141][142][143][144][145][146][147][148][149][150] noble gas atoms on metals, [151][152][153][154][155][156][157] small inorganic molecules (such as CO, [158][159][160][161][162][163][164] NO 165 and H 2 O 166,167 ) on metals and oxides, 160,161 and various organic semiconductors on metals and inorganic semiconductors. 131,132,134,…”

Section: Ela and The Importance Of Electrode Work Functionmentioning

confidence: 99%

Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces

2013

View full text Add to dashboard Cite

Thin-film metal oxides are among the key materials used in organic semiconductor devices. As there are no intrinsic charge carriers in a typical organic semiconductor, all charges in the device must be injected from electrode/organic interfaces, whose energetic structure consequentially dictates the performance of devices. The energy barrier at the interface depends critically on the work function of the electrode. For this reason, various types of thin-film metal oxides can be used as a buffer layer to modify the electrode work function. This paper provides a review on recent progress in metal oxide/organic interface energetics, oxide valence structure and work function, as well as the impact of defects and interfacial reactions on oxide work functions. This review provides a rational guide to process engineers in selecting the best suitable electrode/oxide structures for a targeted applications.

show abstract

Section: Ela and The Importance Of Electrode Work Functionmentioning

confidence: 99%

Thin-film metal oxides in organic semiconductor devices: their electronic structures, work functions and interfaces

2013

View full text Add to dashboard Cite

show abstract

“…23 However, as shown in Fig. S1 (ESIw) no notable amount of 12 C 18 O (m/z = 30) or 13 C 16 O (m/z = 29) was produced (desorbed 12 C 18 O and 13 C 16 O are impurities in the dosed CO), suggesting that the CO dissociation probability on clean Ir(111) is immeasurable using our techniques (we estimate our lower limit for measuring CO dissociation to be B0.2%).…”

mentioning

confidence: 90%

“…1 The FTS process, which produces hydrocarbons from CO and hydrogen, has received widespread attention as an alternative to petroleum. 2 Thus, adsorption and dissociation of CO have been investigated experimentally and theoretically on group-VIII transition metals (Fe, 3 Pt, 4 Ni, 5 Co, 6 Rh, 7 Ru, 8 and Pd 9 ) and non-VIII group transition metals (Mo, 10 W, 11 Ag, 12 and Cu 13 ). The reactivity of transition metals for CO dissociation has generally been found to decrease when starting from the upper left moving down to the right in the periodic table.…”

mentioning

confidence: 99%

“…Fig. 1 shows the desorption of 13 C 16 O (an indicator of dissociation) from Ir(111) with two different coverages of 16 O a [O 2 dissociates on clean Ir(111) 26,27 ] after pre-adsorbing 0.25 monolayer (ML) of 13 C 18 O. Firstly, a measurable amount of 13 C 16 O was detected to be desorbing from oxygen free Ir(111) [black curve] due to impurities in the 13 C 18 O (B3%). However, the amount of 13 C 16 O produced increases as a function of increasing 16 O a coverage, indicating the promotional effect of oxygen adatoms on CO bond cleavage.…”

mentioning

confidence: 99%

See 1 more Smart Citation

CO dissociation induced by adsorbed oxygen and water on Ir(111)

Pan¹,

Hoang²,

Gong³

et al. 2009

Chem. Commun.

View full text Add to dashboard Cite

show abstract

“…Fragmentary information exists concerning this question. It has been found that K promotes the dissociation of CO on Cu, but only in the presence of atomic step sites [13,14]. In another example, the dissociation of CO on Ru containing adsorbed Li atoms is enhanced when the atomically stepped Ru(1 0 9) surface is compared with Ru(0 0 1) [15].…”

Section: Introductionmentioning

confidence: 99%