CMOS RF integrated circuits at 5 GHz and beyond

Lee, T.H.; Wong, Sai‐Keung

doi:10.1109/5.888995

Cited by 90 publications

(39 citation statements)

References 21 publications

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“…4 that, for a given inductor quality factor , there is an upper bound on the maximum achievable PER , where the efficiency becomes zero. This maximum achievable PER can be calculated from (11) to be (13) Equation (13) provides an upper bound on the value of in a single inductor-capacitor section. However, it should be noted that the efficiency would drop to zero as we approach this , making this bound unachievable.…”

Section: A Resonant Impedance Transformationmentioning

confidence: 99%

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Distributed active transformer-a new power-combining and impedance-transformation technique

Aoki

Kee

Rutledge

et al. 2002

IEEE Trans. Microwave Theory Techn.

395

218

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Abstract-In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-input and output matching has been fabricated using 0.35-m CMOS transistors.

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Section: A Resonant Impedance Transformationmentioning

confidence: 99%

“…The latter is caused by the highly conductive substrate, as well as thin metal and dielectric layers. These problems become more serious as the minimum feature sizes are scaled down in each new process generation [13].…”

Section: Introductionmentioning

confidence: 99%

Distributed active transformer-a new power-combining and impedance-transformation technique

Aoki

Kee

Rutledge

et al. 2002

IEEE Trans. Microwave Theory Techn.

395

218

View full text Add to dashboard Cite

show abstract

“…Innovations in circuit and system design also played a major role in this. Direct conversion or homodyning reduced the number of passive interstage filters at the cost of more elaborate circuit implementations and greater complexity in the baseband circuits [2], [3]. Also, system standards geared to silicon IC technology, such as Bluetooth, played to silicon's strengths and attraction as a low-cost technology for high-volume applications.…”

Section: Introductionmentioning

confidence: 99%

SiGe Radio Frequency ICs for Low-Power Portable Communication

Long

2005

Proc. IEEE

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“…With today's sub-micron CMOS technologies, it is now possible to implement CMOS RFICs for operation in the GHz range [1][2] [3]. Although CMOS is notorious for its inferior performance as an RFIC technology, it certainly has very interesting properties for realizing competitive radio transceiver solutions.…”

Section: Introductionmentioning

confidence: 99%

A MOS Model 9 Extension for GHz CMOS RF Circuit Design

Iversen

2001

2001 31st European Microwave Conference

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This paper presents an extension to the compact MOS model 9 that enables accurate simulation of CMOS RF circuits in the GHz range. The MOS model 9 is generally accepted for low frequency design, but it is quite inaccurate at GHz frequencies if device parasitics are not considered. The presented model is based on a MOS model 9, extended by a network of parasitics, consisting of six resistors, five capacitors, and two JUNCAP diode models. A model developed for a 0.25 µm CMOS technology shows good accuracy in the measured frequency range up to 12 GHz and over a wide bias range. By applying simple rules for scaling of parasitics and a unit transistor layout approach, the model also shows scalability with respect to device width. The model also predicts third-order intercept point with good accuracy, and simulations and measurements on a 2 GHz CMOS amplifier shows also good agreement. INTRODUCTIONWith today's sub-micron CMOS technologies, it is now possible to implement CMOS RFICs for operation in the GHz. Although CMOS is notorious for its inferior performance as an RFIC technology, it certainly has very interesting properties for realizing competitive radio transceiver solutions. Among the most important advantages is the possibility of integrating RF analog circuits together with large-scale digital circuits, and also the important potential for low cost. A major obstacle in designing CMOS RFICs is the lack of adequate models that predict device behavior at GHz frequencies. For low frequency analog and digital circuit design, compact MOS models such as MM9 (MOS model 9) [4], BSIM3v3 [5] and EKV [6] are widely accepted, but applying these models at GHz frequencies without parasitic effects gives inaccurate results [7]. A clear example of this is given by the s-parameter plots shown in Fig. 1. This paper describes an extension to the compact MM9 by a network of parasitic elements, which enables accurate prediction of NMOST (nchannel MOS transistor) s-parameters in a wide bias range and for frequencies up to 12 GHz.

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CMOS RF integrated circuits at 5 GHz and beyond

Cited by 90 publications

References 21 publications

Distributed active transformer-a new power-combining and impedance-transformation technique

Distributed active transformer-a new power-combining and impedance-transformation technique

SiGe Radio Frequency ICs for Low-Power Portable Communication

A MOS Model 9 Extension for GHz CMOS RF Circuit Design

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