2009
DOI: 10.1088/1748-0221/4/04/p04012
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CMOS pixel sensor development: a fast read-out architecture with integrated zero suppression

Abstract: CMOS Monolithic Active Pixel Sensors (MAPS) have demonstrated their strong potential for tracking devices, particularly for flavour tagging. They are foreseen to equip several vertex detectors and beam telescopes. Most applications require high read-out speed, which imposes sensors to feature digital output with integrated zero suppression. The most recent development of MAPS at IPHC and IRFU addressing this issue will be reviewed. The design architecture, combining pixel array, column-level discriminat… Show more

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Cited by 49 publications
(31 citation statements)
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“…[2,3]), which makes them a good technology choice for precise vertex detectors, particularly for flavor tagging. Charge collection relies on diffusion.…”
Section: Cmos Active Pixel Sensorsmentioning
confidence: 99%
“…[2,3]), which makes them a good technology choice for precise vertex detectors, particularly for flavor tagging. Charge collection relies on diffusion.…”
Section: Cmos Active Pixel Sensorsmentioning
confidence: 99%
“…(8)(c), a factor 1 2 is used because the AERD readout circuit is arranged in double-columns. An example of the front-end gain is 60 μv=e À [4], 80 e À =μm means the particle generates 80 hole/electron pairs in 1 μm silicon thickness. 18 μm is the epi-layer thickness of the standard TowerJazz CIS process.…”
Section: Power Consumptionmentioning
confidence: 99%
“…The chip sensor aims to achieve a spatial resolution of $ 5 μm (pixel pitch smaller than 30 μm) and a power density lower than 100 mW/cm 2 [2]. The state-of-the-art of MAPS used for particle detectors is represented by the STAR pixel detector, which is equipped with the ULTIMATE chip [4]. The ULTIMATE is an example of the traditional rolling shutter readout architecture.…”
Section: Introductionmentioning
confidence: 99%
“…Each pixel contains a sensing diode, a pre-amplifier, a clamping element and an offset compensated discriminator. The performance of the first three parts has been validated in previous chips [8] and their working principle is described in [9]. The charge sensitive element is formed by an N-well/P-epi diode, labelled "D1" in figure 3, which displays the schematics of the two pixel versions of AROM-0 exhibiting the most satisfactory test results.…”
Section: Pixel Designmentioning
confidence: 99%