CMOS on-chip stacked Marchand balun for millimeter-wave applications

Ivan, Lai Chee-Hong; Inui, C.; Fujishima, Minoru

doi:10.1587/elex.4.48

Cited by 11 publications

(1 citation statement)

References 5 publications

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“…Stacked Marchand baluns based on coupled transmission lines (TLs) are used to convert a single-ended signal into differential, and vice versa [20], [21]. The output balun also performs an impedance transformation to match the relatively low PA-cell optimal load impedance to 50 .…”

Section: A Circuit Designmentioning

confidence: 99%

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

Roev

Qureshi

Geurts

et al. 2022

IEEE Trans. Microwave Theory Techn.

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Section: A Circuit Designmentioning

confidence: 99%

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

Roev

Qureshi

Geurts

et al. 2022

IEEE Trans. Microwave Theory Techn.

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50 GHz S-shaped rat-race balun with 1.4 dB insertion loss in a wafer-level chip-size package process

Öncü

Inui

Manzawa

et al. 2009

Int. J. Microw. Wireless Technol.

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In millimeter-wave CMOS circuits, a balun is useful for connecting off-chip single-end devices and on-chip differential circuits to improve noise immunity. However, an on-chip balun occupies a large chip area. To reduce the chip area required for the on-chip balun, a new rat-race balun using a rewiring technology with a wafer-level chip-size package (W-CSP) is proposed. The W-CSP balun occupies no area in a die because it is placed over integrated circuits. In the proposed balun, an S-shaped structure is adopted in order to directly connect the balun to differential GSGSG pads on a chip with a small area. The S-shaped W-CSP balun was fabricated on a silicon-on-insulator (SOI) substrate. The core area of the S-shaped rat-race balun is 480×735 µm, which is 22.4% that of a square rat-race balun. As a result of measurement, we found that the minimum insertion loss is 1.4 dB and the operating frequency ranges from 40 to 61 GHz.

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K- and Ka-band miniature CMOS balun with a single spiral coupled structure

Suh

Kim

et al. 2013

Journal of Electromagnetic Waves and Applications

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CMOS on-chip stacked Marchand balun for millimeter-wave applications

Cited by 11 publications

References 5 publications

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

50 GHz S-shaped rat-race balun with 1.4 dB insertion loss in a wafer-level chip-size package process

K- and Ka-band miniature CMOS balun with a single spiral coupled structure

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