A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

Roev, Artem; Qureshi, Jawad; Geurts, Marcel; Maaskant, R.; Matters-Kammerer, Marion K.; Ivashina, Marianna

doi:10.1109/tmtt.2022.3198704

Cited by 7 publications

(3 citation statements)

References 34 publications

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“…Spatial power combining seems to be flourishing in BiC-MOS. Roev et al designed a K a −band (23-33 GHz) PA in a 0.25 µm BiCMOS process from NXP [54]. The combiner consists of strongly coupled microstrip lines interfacing to a single substrate-integrated waveguide.…”

Section: B Power Amplifiers Above 50 Ghzmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change. Standards that define the operation of next-generation mobile networks are moving away from the traditional radio frequency (RF) spectrum and into millimeter-wave (mm-wave) bands. The physical layer (PHY) for IEEE 802.11ad Wi-Fi and 802.11ay WLANs dictates operation in the unlicensed 60 GHz band. 5G New Radio (NR) applications utilize selected bands from 26 to 39 GHz. Additionally, newly developing Fourth Industrial Revolution (4IR) applications depend on 5G NR as an enabling technology. Satellite communications and wireless backhaul will occur in E-band between 70-86 GHz. Increasing demands from the market cause designers to push boundaries, and the development of standards guide technological advances. Perhaps the most substantial improvements are observed in integrated circuit technology. This article details the major Si processes, namely Complementary Metal Oxide Semiconductor (CMOS) and SiGe Bipolar CMOS (BiCMOS), and their foray into the wireless transceiver space traditionally dominated by GaAs. CMOS and BiCMOS have become popular in many communities because of their low fabrication cost and excellent digital integration capabilities. RF performance has matured to where Si is a serious competitor for tried-and-tested III-V technologies. Some extreme environments and sophisticated applications still favor GaAs and GaN, however. GaAs, for example, can yield unparalleled output power and excellent noise figure performance, albeit at a higher cost and increased design and manufacturing complexity due to the multi-chip nature of these circuits.INDEX TERMS 5G new radio (NR), broadband communication, cellular vehicle-to-everything (C-V2X), CMOS, fourth industrial revolution (4IR), Internet of Things (IoT), millimeter-wave, SiGe BiCMOS.

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Section: B Power Amplifiers Above 50 Ghzmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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“…Their applications span waveguiding structures [1], antennas [2], microwave circuits including power dividers [3,4], baluns [5,6], and filters [7]. There are also efforts to integrate them with electronics [8,9] for lower losses at higher frequencies. The standard SIW waveguide typically supports TE 10 mode, with its application in microwave and RF systems as an antenna launcher offering a single linear polarization.…”

Section: Introductionmentioning

confidence: 99%

A Simplified Extended Multilayer SIW Supporting TE<sub>01</sub> Mode Integrated with a Feeding Structure

Empliouk,

Kolitsidas,

Kyriacou

2024

PIER Letters

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In this letter, a TE01 operation of a multilayered Substrate Integrated Waveguide (SIW) is presented. To enable the propagation of this typically unsupported mode, the SIW is integrated with feeding layer and with an Electromagnetic Band Gap (EBG) structure, exciting and confining the field within the proposed waveguide structure. The EBG is simply stacked on top and bottom of the proposed structure, allowing for ease of manufacturing. The overall proposed structure is simulated and measured, and the results indicate very low insertion loss in the passband of the waveguide.

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“…However, because the size of an SIW is on the order of the guided wavelength λ SIW in the SIW, SIWs are usually implemented at the board level as interconnects and transitions [6], filters [7], [8], antennas [9], or power combiners [10] for hybrid integration with transistors.…”

Section: Introductionmentioning

confidence: 99%

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Li,

Fay,

Hwang

2024

IEEE J. Microw.

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We report a solid-state traveling-wave amplifier (TWA) realized through monolithic integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a stepped-impedance microstrip line as the input divider, but a low-loss, high-power-capacity SIW as the output combiner. The input signal is distributed to four GaN high-electron mobility transistors (HEMTs) evenly in magnitude but with 90°successive phase delays at the fundamental frequency. The HEMTs are distributed in the SIW in a period of a half wavelength at the second harmonic frequency, so that their outputs are combined coherently at the SIW output. To overcome the limited speed of the HEMTs, they are driven nonlinearly to generate second harmonics, and their fundamental outputs are suppressed with the SIW acting as a high-pass filter. The measured characteristics of the TWA agree with that simulated at the small-signal level, but exceeds that simulated at the large-signal level. For example, under an input of 15 dBm at 70 GHz, the output at 140 GHz is 38-dB above that at 70 GHz. Under an input around 70 GHz and 20 dBm, the output around 140 GHz is 14 dBm with a 3-dB bandwidth of 6%. This is not only the first D-band frequency multiplier based on the GaN HEMT technology, but also one with the highest output power and the lowest fundamental leakage among all D-band multipliers of different transistor technologies. This proof-of-principle demonstration opens the path to improve the power, gain and efficiency of sub-terahertz TWAs with higher-performance transistors and drive circuits. Although the demonstration is through monolithic integration, the approach is applicable to heterogeneous integration with the SIW and transistors fabricated on separate chips.

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A Wideband mm-Wave Watt-Level Spatial Power-Combined Power Amplifier With 26% PAE in SiGe BiCMOS Technology

Cited by 7 publications

References 34 publications

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

A Simplified Extended Multilayer SIW Supporting TE<sub>01</sub> Mode Integrated with a Feeding Structure

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

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