2014
DOI: 10.1016/j.nima.2014.07.017
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CMOS monolithic active pixel sensors for high energy physics

Abstract: a b s t r a c tMonolithic pixel detectors integrating sensor matrix and readout in one piece of silicon are only now starting to make their way into high energy physics. Two major requirements are radiation tolerance and low power consumption. For the most extreme radiation levels, signal charge has to be collected by drift from a depletion layer onto a designated collection electrode without losing the signal charge elsewhere in the in-pixel circuit. Low power consumption requires an optimization of Q/C, the … Show more

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Cited by 24 publications
(15 citation statements)
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“…Remarkable advances have been made in reducing the power consumption in Si-pixel sensors [67] especially in the case of Monolithic Active Pixel Sensors (MAPS) [68], but it still remains at the level of O(µW)/channel or fractions of it for MAPS. MAPS sensors with power consumption of a few tens of nW are conceivable [69], but not in the immediate future and most likely not with the desired features discussed later in the text. The limit for microstrip detectors covering the same areas loosens down to O(0.1 mW)/channel, which is similar to the consumption of commercially available Application Specific Integrated Circuits (ASIC) for Si-detector readout in space (such as the 0.3 mW/channel of IDE1140 by IDEAS [70], formerly known as VA140 or VA64_hdr).…”
Section: Technological Solutionsmentioning
confidence: 99%
“…Remarkable advances have been made in reducing the power consumption in Si-pixel sensors [67] especially in the case of Monolithic Active Pixel Sensors (MAPS) [68], but it still remains at the level of O(µW)/channel or fractions of it for MAPS. MAPS sensors with power consumption of a few tens of nW are conceivable [69], but not in the immediate future and most likely not with the desired features discussed later in the text. The limit for microstrip detectors covering the same areas loosens down to O(0.1 mW)/channel, which is similar to the consumption of commercially available Application Specific Integrated Circuits (ASIC) for Si-detector readout in space (such as the 0.3 mW/channel of IDE1140 by IDEAS [70], formerly known as VA140 or VA64_hdr).…”
Section: Technological Solutionsmentioning
confidence: 99%
“…The main motivation of using a small sensing diode is its very small detector capacitance (e.g. < 5 fF), which allows to minimize the analog power consumption with given analog performance [14]. The use of small collection node in high radiation environment is also encouraged by recent R&D progress to improve the sensor depletion by using a modified process [10].…”
Section: Tj-monopixmentioning
confidence: 99%
“…A small sensor capacitance is advantageous in order to minimise analogue power consumption, noise and threshold and maximise the signal [10]. The sensor capacitance is in first approximation proportional to the radius of the collection electrode.…”
Section: Monolithic Pixel Detector Developmentsmentioning
confidence: 99%