CMOS Metrics and Model Evaluation

Bhushan, M.; Ketchen, M. B.

doi:10.1007/978-1-4939-1349-7_10

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…Now, to proceed with the computation of channel resistance, in the expression for I DS in the linear region, the second term (V DS 2 /2) can be ignored, as its value is very small. In addition, with digital switching circuits, the channel length modulation factor can be ignored, as the effect of V DS on the switching is very small [15] . Hence,…”

Section: When One Mosfet Is In Linear Region and The Other Is In Cutoffmentioning

confidence: 99%

Frequency equation for the submicron CMOS ring oscillator using the first order characterization

Koithyar

Ramesh

2018

J. Semicond.

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By utilizing the first order behavior of the device, an equation for the frequency of operation of the submicron CMOS ring oscillator is presented. A 5-stage ring oscillator is utilized as the initial design, with different Beta ratios, for the computation of the operating frequency. Later on, the circuit simulation is performed from 5-stage till 23-stage, with the range of oscillating frequency being 3.0817 and 0.6705 GHz respectively. It is noted that the output frequency is inversely proportional to the square of the device length, and when the value of Beta ratio is used as 2.3, a difference of 3.64% is observed on an average, in between the computed and the simulated values of frequency. As an outcome, the derived equation can be utilized, with the inclusion of an empirical constant in general, for arriving at the ring oscillator circuit’s output frequency.

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Section: When One Mosfet Is In Linear Region and The Other Is In Cutoffmentioning

confidence: 99%

Frequency equation for the submicron CMOS ring oscillator using the first order characterization

Koithyar

Ramesh

2018

J. Semicond.

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“…The significant improvement in the advanced CMOS process has raised much interest in Si based millimeter-wave integrated circuit design during recent years [1][2][3][4][5]. It has also led to the development integration OE power amplifier.…”

Section: Introductionmentioning

confidence: 99%

The Analysis Research of Proximity Effect Correlation Algorithm for Accurate RF System

Li¹

2015

Advances in Intelligent Systems Research

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In this paper, we propose a novel research of proximity effect correlation algorithm for accurate RF system. In summary, we have demonstrated an efficient approach for broadband modeling of millimeter-wave CMOS FETs by using a set of pre-measured and pre-modeled cells with varied gate width. This approach allows a scalable and flexible modeling process, and simplifies the modeling procedures. The method has been verified with experimental results measured from 65-nm RF CMOS devices, where the modeled data match well with the measured data in a wide frequency range up to 40 GHz and across a wide range of gate width. The experimental shows the feasibility of our method.

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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Bohuslavskyi

Barraud

Barral

et al. 2018

IEEE Trans. Electron Devices

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Extensive electrical characterization of ring oscillators (ROs) made in high-κ metal gate 28nm Fully-Depleted Silicon-on-Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage (τ P ), static current (I STAT ), and dynamic current (I DYN ) are analyzed for the case of the increase of threshold voltage (V TH ) observed at low temperature. Then, the same analysis is performed by compensating V TH to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages (V DD ) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product (EDP) can be significantly reduced at low temperature by applying a forward body bias voltage (V FBB ). We demonstrate that outstanding performance of RO in terms of speed (τ p =37ps) and static power (7nA/stage) can be achieved at 4.3K with V DD reduced down to 0.325V.

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CMOS Metrics and Model Evaluation

Cited by 3 publications

References 9 publications

Frequency equation for the submicron CMOS ring oscillator using the first order characterization

Frequency equation for the submicron CMOS ring oscillator using the first order characterization

The Analysis Research of Proximity Effect Correlation Algorithm for Accurate RF System

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

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