The Analysis Research of Proximity Effect Correlation Algorithm for Accurate RF System

Abstract

In this paper, we propose a novel research of proximity effect correlation algorithm for accurate RF system. In summary, we have demonstrated an efficient approach for broadband modeling of millimeter-wave CMOS FETs by using a set of pre-measured and pre-modeled cells with varied gate width. This approach allows a scalable and flexible modeling process, and simplifies the modeling procedures. The method has been verified with experimental results measured from 65-nm RF CMOS devices, where the modeled data match well with the measured data in a wide frequency range up to 40 GHz and across a wide range of gate width. The experimental shows the feasibility of our method.