CMOS image sensors

Gamal, Abbas El; Eltoukhy, Helmy

doi:10.1109/mcd.2005.1438751

Cited by 662 publications

(352 citation statements)

References 38 publications

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“…The photoninduced current of an IR detector under illumination is given in Eq. (4): 15,18 i PH ¼ qλ hc…”

Section: Sensitivitymentioning

confidence: 99%

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Venter

Sinha

2013

Opt. Eng

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Abstract. Classically gated infrared (IR) detectors have been implemented using charge-coupled devices (CCD). Bipolar complementary metal-oxide semiconductor (BiCMOS) technology emerged as a viable alternative platform for development. BiCMOS technology has a number of advantages over CCD and conventional CMOS technology, of which increased switching speed is one. The pixel topology used in this work is a reversed-biased diode connected heterojunction bipolar transistor. The disadvantage of CMOS detectors is the increased readout noise due to the increased on-chip switching compared to CCD, which degrades dynamic range (DR) and sensitivity. This yields increased switching speeds compared to conventional bipolar junction transistors. Sensitivity improved from 50 mA∕W (peak) at 430 nm in CCD detectors to 180 mA∕W (peak) (or 180; 000 V∕W) at 665 nm in BiCMOS detectors. Other CMOS IR detectors previously published in the literature showed sensitivity values from 2750 to 5000 V∕W or 100 mA∕W. The DR also improved from 47 and 53 dB to 70 dB. The sensitivity of conventional CCD detectors previously published is around 53 mA∕W. The second advantage is that detection in the near-IR band with conventional silicon integrated technology is possible. This work has shown increased detection capabilities up to 1.1 μm compared to Si detectors.

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“…The photoninduced current of an IR detector under illumination is given in Eq. (4): 15,18 i PH ¼ qλ hc…”

Section: Sensitivitymentioning

confidence: 99%

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Venter

Sinha

2013

Opt. Eng

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“…The image sensor shows a linear response to illumination and a good noise performance [12]. The photodiode area is 131 µm 2 , which yields a sensor fill factor of 8%.…”

Section: Vision Chip Implementationmentioning

confidence: 99%

CMOS realisation of analogue processor for early vision processing

Jendernalik¹,

Jakusz²,

Blakiewicz³

et al. 2011

Bulletin of the Polish Academy of Sciences: Technical Sciences

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Abstract. The architecture concept of a high-speed low-power analogue vision chip, which performs low-level real-time image algorithms is presented. The proof-of-concept prototype vision chip containing 32 × 32 photosensor array and 32 analogue processors is fabricated using a 0.35 µm CMOS technology. The prototype can be configured to register and process images with very high speed, reaching 2000 frames per second, or achieve very low power consumption, several µW. Finally, the experimental results are presented and discussed.

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“…In such a case, LF components of the noise are adequately suppressed, but the HF part of the noise contributes noise at the output. One example of a circuit where noise is typically the dominant noise source despite the use of CDS is an CMOS imager pixel [45], which is treated in more detail here.…”

Section: Correlated Double Samplingmentioning

confidence: 99%

Low-Frequency Noise Phenomena in Switched MOSFETs

Wel

Klumperink

Kolhatkar

et al. 2007

IEEE J. Solid-State Circuits

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Abstract-In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, we review the limitations of current compact noise models which do not model such single-electron effects. We present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, we treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.Index Terms-CMOS, flicker noise, large-signal excitation, lowfrequency noise, low-noise circuit design, MOSFET, noise reduction, RTS noise, switched biasing, 1 noise.

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CMOS image sensors

Cited by 662 publications

References 38 publications

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology

CMOS realisation of analogue processor for early vision processing

Low-Frequency Noise Phenomena in Switched MOSFETs

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