CMOS IC radiation hardening by design

Camplani, A.; Shojaii, J.; Shrimali, Hitesh; Stabile, A.; Liberali, V.

doi:10.2298/fuee1402251c

Cited by 11 publications

(10 citation statements)

References 18 publications

(18 reference statements)

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“…The application of Buck in space has to consider all kinds of radiation effect. For CMOS devices, total ionizing dose (TID) effect is prone to occur in the radiation environment, and it will lead to threshold voltage shift [1,2], transconductance degradation [3,4], carrier mobility reduction and leakage current [5,6,7,8], resulting in the degradation or failure of devices and circuits [9,10,11,12,13,14,15]. In this aspect, it is of great significance to research on the radiation-resistant reinforcement of Buck.…”

Section: Introductionmentioning

confidence: 99%

A radiation-hardened Buck converter

Yang

Luo

et al. 2019

IEICE Electron. Express

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Buck converter is widely used in the aerospace field. However, radiation in the aerospace environment will result in degradation or failure of devices and circuits. This paper presents a radiation-hard Buck, which is an adaptive on-time Buck. A radiation-hard adaptive on-time generator is proposed by utilizing of leakage current compensation. The proposed radiation-hard adaptive on-time generator is composed of an adaptive ontime timing block and a charging current generator. Finally, the proposed Buck is fabricated in a standard 0.18 µm BCD process. And the radiation tests show that the Buck still maintains stability after total ionizing dose irradiation at a total dose of 350 Krad (Si).

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Section: Introductionmentioning

confidence: 99%

A radiation-hardened Buck converter

Yang

Luo

et al. 2019

IEICE Electron. Express

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“…Traditionally, the radiation tolerance for PROM is achieved by using specific manufacturing process, known as "Radiation Hardening by Processes" (RHBP), which has a drawback by entailing high costs. To address this issue, Radiation Hardened By Design (RHBD) techniques have been proposed [4]. The RHBD uses layout and circuit design techniques for radiation hardness and radiation-tolerant ICs can be fabricated by standard CMOS process.…”

Section: Introductionmentioning

confidence: 99%

A radiation-hardened programmable read only memory for space applications

Xie

Zhang

et al. 2018

IEICE Electron. Express

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A radiation-hardened 64-Kb Programmable Read Only Memory (PROM) fabricated by 0.18 um commercial technology is proposed. The Radiation-Harden-By-Design (RHBD) technique is applied in the design of the PROM. At the cell level, memory cells consisting of two high reliable antifuse elements are used. At the circuit level, robust sense amplifiers are designed with Dual Interlocked Cell (DICE) latches added to the radiation sensitive nodes. Furthermore, the enclosed NMOS and guard rings are applied at the layout level. As the measurement showed, the PROM could operate at the temperature between −55 and +125°C with 55 ns maximum address access time. The TID (Total Ionizing Dose) test showed that irradiation dose to 5M rad(Si) negligibly impacted standby current and access time. In the heavy ion test, no SEU (Single Event Upset) and no SEL (Single Event Latch-up) were observed up to LET (Linear Energy Transfer) of 64.4 Mev·cm 2 /mg.

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“…The circuit variants differ with respect to the topology, the use of cascode stages, the supply voltage and the oxide thickness of the utilized transistors. All topologies were implemented using regular radiation-hardening-bydesign (RHBD) layout techniques, such as extended use of guard rings, substrate contacts, increased transistor sizes for hardening against ASETs, whilst edgeless NMOS devices were employed for hardening against total ionization dose (TID) [9], [55], [56]. The integrated circuits were exposed to heavy ions (Si, Kr and Xe) and the resulting ASETs were recorded at the output of each topology independently by using a high-speed oscilloscope.…”

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confidence: 99%

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Andreou

Javanainen

Rominski

et al. 2016

IEEE Trans. Nucl. Sci.

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Abstract-An architectural performance comparison of bandgap voltage reference variants, designed in a 0.18 µm CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space applications. The paper includes an analysis on how pulse quenching occurs within the indispensable current mirror, which is used in every analog circuit.

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CMOS IC radiation hardening by design

Cited by 11 publications

References 18 publications

A radiation-hardened Buck converter

A radiation-hardened Buck converter

A radiation-hardened programmable read only memory for space applications

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

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