CMOS driven micro-pixel LEDs integrated with single photon avalanche diodes for time resolved fluorescence measurements

Rae, Bruce R.; Griffin, C.; McKendry, Jonathan J. D.; Girkin, John M.; Zhang, H X; Gu, Erdan; Renshaw, D.; Charbon, Edoardo; Dawson, Martin D.; Henderson, Robert K.

doi:10.1088/0022-3727/41/9/094011

Cited by 47 publications

(28 citation statements)

References 20 publications

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“…7(b) shows experimental and simulated breakdown voltages as functions of gate biases. The breakdown voltage is calculated as the point where the curvature of the current-voltage curve changes sign, as previously described in (3)- (6). The comparison shows a good match between simulated results for the device and measured data for the and devices.…”

Section: Simulation and Model Validationmentioning

confidence: 82%

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Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

et al. 2010

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We report on the breakdown characteristics of a single-photon avalanche diode structure fabricated in a 0 5 m single-well CMOS process. This paper features two mechanisms for reducing perimeter breakdown. The first mechanism consists of using the lateral diffusion of adjacent n-wells to reduce the electric field at the diode's periphery, and the second makes use of a poly-silicon gate over the high field regions to modulate the electric field. We studied each technique independently as well as their combined effect on the devices' avalanche profiles. In addition to marked alterations in the current-voltage curves near and above breakdown, the diodes' breakdown voltages were increased by more than 4 V, indicating that perimeter breakdown was curtailed.We verified this assertion through a self-consistently solved 2-D numerical model based on Poisson's equation and the hole and electron current continuity equations coupled with rate equations for carrier generation due to impact ionization. The model revealed spatial maxima of the charge generation rates, thereby indicating regions susceptible to breakdown. Our investigation revealed that in native diodes, the generation rate peaked at the perimeter and near the junction's surface, suggesting perimeter breakdown. Conversely, in devices where suppression techniques were used, the region of maximum generation spread laterally and away from the surface, indicating full volumetric breakdown was achieved.

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Section: Simulation and Model Validationmentioning

confidence: 82%

“…They are favored as an inexpensive optical detection modality due to their ability to transduce weak photon fluxes resulting from fast-decaying optical signals. For instance, they have been used in ultra-weak biochemiluminescence detection [4] and time-resolved fluorescence measurements [6].…”

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confidence: 99%

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

et al. 2010

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“…This has changed rapidly in the past few years [7][8][9]11,15,24,25]. The only conceptual difference between ranging applications and fluorescence detection is that instead of detecting the light reflected by objects, a ToF sensor detects light emitted by fluorophores.…”

Section: Beyond Rangementioning

confidence: 99%

Beyond Range: Innovating Fluorescence Microscopy

Esposito

2012

Remote Sensing

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Time-of-Flight (ToF) technologies are developed mainly for range estimations in industrial applications or consumer products. Recently, it was realized that ToF sensors could also be used for the detection of fluorescence and of the minute changes in the nanosecond-lived electronic states of fluorescent molecules. This capability can be exploited to report on the biochemical processes occurring within living organisms. ToF technologies, therefore, provide new opportunities in molecular and cell biology, diagnostics, and drug discovery. In this short communication, the convergence of the engineering and biomedical communities onto ToF technologies and its potential impact on basic, applied and translational sciences are discussed.Keywords: Time-of-Flight (ToF); fluorescence lifetime; microscopy Converging CommunitiesIt was the summer of 2005 when in the laboratory of Fred Wouters we started the first autonomous runs of our new in-house developed high throughput fluorescence lifetime imaging (FLIM) system. However successful that development was, one key element in allowing the biomedical community to benefit from FLIM systems, to enable the screening technologies we were pioneering [1] and to get closer to the routine application of FLIM, was still missing: replacing the expensive, comparatively fragile, and not very user-friendly, multi-channel plates used in FLIM with better technologies. The basic idea was to find a silicon-based detector capable of demodulating fluorescence signals on a bi-dimensional array of pixels. Frequent searches of primary literature returned only a few, though interesting, papers including: Nishikata et al. [2] on the development of a dedicated lock-in imager in CCD technology and, Mitchell et al. [3,4] on the adaptation of conventional CCD cameras to achieve demodulation. Unfortunately, ad hoc technologies for lock-in imaging appeared to be operating at OPEN ACCESS

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“…Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation [2]. It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3,4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of planar GaN-based micro-pixel light emitting diode arrays

Massoubre

McKendry

Guilhabert

et al. 2009

2009 IEEE LEOS Annual Meeting Conference Proceedings

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Micro-pixelated GaN light-emitting diodes (‘micro-LED’s) offer attractions for a wide range of applications including microdisplays, mask-free photolithography, lab-on-a-chip and bioinstrumentation [1]. Mesa dry etching methods have underpinned the development of this technology to date. Here we propose and demonstrate a new planar process which simplifies the process flow and permits individually-addressable pixelated devices to be fabricated without any obvious degradation of electrical and optical performance. The approach is based on the intrinsic high resistivity of the p-type GaN layer for pixel to pixel electrical isolation and on a CHF3 plasma treatment to dramatically reduce current leakage through the p-GaN/metal interface. Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation [2]. It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3, 4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm

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CMOS driven micro-pixel LEDs integrated with single photon avalanche diodes for time resolved fluorescence measurements

Cited by 47 publications

References 20 publications

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

Beyond Range: Innovating Fluorescence Microscopy

Fabrication of planar GaN-based micro-pixel light emitting diode arrays

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