CMOS Doherty Amplifier With Variable Balun Transformer and Adaptive Bias Control for Wireless LAN Application

Ryu, Nam-Sik; Jang, Seunghyun; Lee, Kwang Chun; Jeong, Yongchae

doi:10.1109/jssc.2014.2313561

Cited by 32 publications

(13 citation statements)

References 19 publications

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“…However, a quarter wave TLine is hard to implement in CMOS as the losses would simply be too high (Reynaert, Cao et al, 2016). Several papers (Ryu, Jang et al, 2014;Reynaert, Cao et al, 2016;Kim, Lee & Hong, 2016) report using series combining transformers in order to imitate the loadpull effect. The effect is reduced, comparing to the traditional DPA, but the benefit of combining a Class AB and a Class C PA still results in a higher overall efficiency and a possibly increased bandwidth.…”

Section: Doherty Architecturementioning

confidence: 99%

“…Both designed DPAs are summarized and compared to the target specifications in Table 3.7. (Cui, Roblin et al, 2007) 0.18 μm CMOS 3.7 3.5 24.4 36.1 6 (Ryu, Jung & Jeong, 2012) (Kim, Son et al, 2014) 0.18 μm CMOS -0.89 25 43.6 5 (Ryu, Jang et al, 2014) 0 The designed DPA parameters are summarized and compared to those presented in the similar CMOS process scale in Table 3.8. Both designed DPA configurations are on par with the published DPAs, but is designed to operate at a much higher 6.5 GHz frequency with a smaller supply voltage.…”

Section: Classical and Simplified Doherty Power Amplifier Configuratimentioning

confidence: 99%

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Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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Vilnius 2019 Disertacija rengta 2015-2019 metais Vilniaus Gedimino technikos universitete. Vadovas doc. dr. Vaidotas BARZDĖNAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Vilniaus Gedimino technikos universiteto Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. habil. dr. Romualdas NAVICKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Nariai: dr. Alvydas LISAUSKAS (Lenkijos mokslų akademijos Aukšto slėgio fizikos institutas, fizika-N 002), doc. dr. Vitalij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Šarūnas PAULIKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Algimantas VALINEVIČIUS (Kauno technologijos universitetas, elektros ir elektronikos inžinerija-T 001). Disertacija bus ginama viešame Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo tarybos posėdyje 2019 m. birželio 13 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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Section: Doherty Architecturementioning

confidence: 99%

Section: Classical and Simplified Doherty Power Amplifier Configuratimentioning

confidence: 99%

Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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“…A DPA using a variable balun transformer as impedance inverter is analyzed in [61]: it achieves load modulation without any phase delay circuit, thus reducing the total chip area. Additionally, adaptive bias control of the auxiliary stage assists the load modulation, resulting in an improved back-off efficiency.…”

Section: A Silicon Technologymentioning

confidence: 99%

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Camarchia

Pirola

Quaglia

et al. 2015

IEEE Trans. Microwave Theory Techn.

204

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In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency and/or linearity, where analog and digital techniques are exploited. Another important trend is the bandwidth enlargement of the Doherty architecture, that involves a large number of papers. Multi-band, multi-mode solutions are also considered, using either fixed or reconfigurable solutions. The final section is dedicated to the most significant Doherty integrated implementations.Index Terms-Doherty power amplifier, gallium arsenide, gallium nitride, linearization, wireless communications.

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“…Among different efficiency enhancement techniques such as envelope-tracking [19], [20] and Doherty [7], [21]- [31], Doherty PA [21] is still one of the most widely used efficiency enhancement techniques, because of its relatively simple and low-cost implementation. Using an off-chip matching network reduces the passives losses, thus increasing the efficiency especially at PBO compared to implementations with on-chip matching network [27]- [29].…”

Section: Introductionmentioning

confidence: 99%

A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier

Hashemi

Zhou²,

Shen

et al. 2019

IEEE Trans. Microwave Theory Techn.

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This paper presents the first application of a digital-intensive intrinsically linear digitally-controlled class-E technique in a Doherty configuration. By careful nonlinear segmentation and multiphase RF-clocking along with overdrive-voltage control and automatic duty-cycle correction, it is shown that even the nonlinearities related to Doherty operation can be fully handled by the underlying design such that digital predistorion DPD can be in principle omitted. The nonlinearity behaviour of the whole digital Doherty PA is analyzed and closed-form equations are given to predict the AM-AM and AM-PM curves. In addition, time/phase mismatch between the Peak and Main branches and the AM and PM signals are accurately compensated. In order to achieve maximum intrinsic linearity, two separate chips with the same architecture, but different design parameters, are fabricated as the Main and Peak amplifiers in 40nm bulk CMOS. To achieve a large RF bandwidth and high passive combiner efficiency, a differential low-loss, wideband Marchand balun-based Doherty power combiner, implemented using re-entrant coupled lines with independent 2 nd harmonic control is proposed, and together with the matching network is fabricated on a two-layer PCB. The measured peak / 6 dB power-back-off P OUT , drain efficiency / power-added efficiency at 2.4 GHz are 17.5 / 12.2 dBm, 57 / 52 % and 36 / 25 % with VDD Main / Peak = 0.6 / 0.7 V. Measured results without using DPD show-41 dBc ACPR and-36 dB EVM for a 16 MHz OFDM signal at 2.5GHz. By using DPD, the measured ACPR and EVM of a 16 / 32 MHz OFDM signals are-52 /-48 dBc and-50 /-48 dB respectively.

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CMOS Doherty Amplifier With Variable Balun Transformer and Adaptive Bias Control for Wireless LAN Application

Cited by 32 publications

References 19 publications

Mid-band 5G wireless network power amplifier research

Mid-band 5G wireless network power amplifier research

The Doherty Power Amplifier: Review of Recent Solutions and Trends

A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier

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