CMOS distributed amplifiers

Ranuarez, J.C.; Ramadass, Yogesh; Deen, M. Jamal

doi:10.1109/iccdcs.2004.1393348

Cited by 3 publications

(2 citation statements)

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“…Structure modifications and more measurements of different bias and impedance will be done in a near future. The measured performances were similar or better with and comparable to the characteristics of various implementations of distributed amplifier on CMOS technology, which were summarized and reported previously [3]. Fig.…”

Section: Back-end Processessupporting

confidence: 86%

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Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate

Sohn

Shin

Kwon

2007

2007 European Radar Conference

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This paper presents a hybrid four-stage distributed amplifier using thin film multi-chip module deposited(MCM-D) based on selectively anodized aluminium substrate with fully embedded passives. Four bare GaAs heterojunction field effect transistors are attached on the all passive-integrated aluminium substrate and interconnected to other devices by wire-bonding. The hybrid distributed amplifier had a unity gain maximum cutoff frequency of 15 GHz, a maximum gain of 8.9 dB over 0.6 GHz to 14.2 GHz band, and a maximum gain flatness of 7.4±1.5 dB over 0.6 GHz to 14.2 GHz bandwidth. The total size is 2.8 mm x 5.5 mm including the bias circuitries and bonding pads.

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Section: Back-end Processessupporting

confidence: 86%

“…Most of distributed amplifiers are fabricated in the form of Monolithic microwave integrated circuits (MMICs) with III-V-related compound, silicon-related compound and CMOS silicon materials [1] - [3].…”

Section: Introductionmentioning

confidence: 99%