CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates

Csutak, S.M.; Schaub, J.D.; Wu, Wei; Shimer, R.; Campbell, Joe C.

doi:10.1109/3.980272

Cited by 40 publications

(18 citation statements)

References 10 publications

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“…Short distance optical communications and emerging optical storage (OS) systems increasingly require fast (Gigahertz to tens of Gigahertz bandwidth) and sensitive photodetectors with a low dark current [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes

Afzalian

Flandre

2007

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes

Afzalian

Flandre

2007

Solid-State Electronics

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“…The waveguide detector geometry is another approach (commonly used for integrated photonics in III-V materials) to decouple the transport distance from the absorption length in a low-capacitance configuration with thin absorbing layers. Recent demonstrations of these devices on SOI [17] have produced bandwidths of 15 and 8 GHz in geometries producing external efficiencies of η = 2% and 12%, respectively.…”

Section: Soi Detectorsmentioning

confidence: 99%

“…The resonant-cavity photodetector concept can also be applied to Ge-on-SOI detectors, and promising results using Ge on double-buried-oxide structures have recently been demonstrated [56]. Finally, another possible alternative for achieving efficient absorption at λ = 1550 nm in Ge is the use of a waveguide geometry similar to that utilized for Si and strained SiGe detectors [17], [29]- [32], [34], [35]. The use of Ge in a waveguide fashion is very advantageous due to the relatively short absorption length of 10 µm at λ = 1550 nm, which could allow low-capacitance geometries to be realized.…”

Section: B Outlook For Improved Performancementioning

confidence: 99%

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

Koester

Schaub²,

Dehlinger

et al. 2006

IEEE J. Select. Topics Quantum Electron.

145

115

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Abstract-An overview of recent results on high-speed germanium-on-silicon-on-insulator (Ge-on-SOI) photodetectors and their prospects for integrated optical interconnect applications are presented. The optical properties of Ge and SiGe alloys are described and a review of previous research on SOI and SiGe detectors is provided as a motivation for the Ge-on-SOI detector approach. The photodetector design is described, which consists of lateral alternating p-and n-type surface contacts on an epitaxial Ge absorbing layer grown on an ultrathin-SOI substrate. When operated at a bias voltage of −0.5 V, 10 µm ×10 µm devices have dark current I dark , of only ∼10 nA, a value that is nearly independent of finger spacing S, between S = 0.3 µm and 1.3 µm. Detectors with S = 1.3 µm have external quantum efficiencies η, of 52% (38%) at λ = 895 nm (850 nm) with corresponding responsivities of 0.38 A/W (0.26 A/W). The wavelength-dependence of η agrees fairly well with expectations, except at longer wavelengths, where Si up-diffusion into the Ge absorbing layer reduces the efficiency. Detectors with 10 µm ×10 µm area and S = 0.6 µm have −3-dB bandwidths as high as 29 GHz, and can simultaneously achieve a bandwidth of 27 GHz with I dark = 24 nA, at a bias of only −1 V, while maintaining high efficiency of η = 46%(33%), at λ = 895 nm (850 nm). Analysis of the finger spacing and areadependence of the device speed indicates that the performance at large finger spacing is transit-time-limited, while at small finger spacing, RC delays limit the bandwidth. Methods to improve the device performance are presented, and it is shown that significant improvement in the speed and efficiency both at λ = 850 and 1300 nm can be expected by optimizing the layer structure design.

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“…Short-distance optical communications and emerging optical storage (OS) systems increasingly require fast (i.e with Gigahertz to tens of Gigahertz bandwidth) and integrated Si photodetectors (Csutak et al, 2002;Hobenbild et al, 2003;Zimmermann, 2000). Thin-film SOI integrated devices appear as the best candidate to cope with these high-speed requirements, notably for the 10Gb/s Ethernet standard (Afzalian & Flandre, 2005;2006.a;Csutak et al, 2002).…”

Section: Introductionmentioning

confidence: 99%

“…Thin-film SOI integrated devices appear as the best candidate to cope with these high-speed requirements, notably for the 10Gb/s Ethernet standard (Afzalian & Flandre, 2005;2006.a;Csutak et al, 2002). For such bandwidths design trades-off between speed and responsivity are very severe and require a careful optimization (Afzalian & Flandre, 2006.b).…”

Section: Introductionmentioning

confidence: 99%

Design of Thin-Film Lateral SOI PIN Photodiodes with up to Tens of GHz Bandwidth

Afzalian¹,

Flandre²

2011

Advances in Photodiodes

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CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates

Cited by 40 publications

References 10 publications

Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes

Characterization of quantum efficiency, effective lifetime and mobility in thin film ungated SOI lateral PIN photodiodes

Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

Design of Thin-Film Lateral SOI PIN Photodiodes with up to Tens of GHz Bandwidth

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