2008
DOI: 10.1364/oe.16.011027
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CMOS-compatible dual-output silicon modulator for analog signal processing

Abstract: A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The design of this modulator does not require epitaxial overgrowth and is therefore simpler to fabricate than previous devices with similar performance.

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Cited by 66 publications
(23 citation statements)
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“…In particular, the rapidly growing field of silicon photonics will enable the integration of major optoelectronic components such as mode-locked lasers [27,122,123], high-speed modulators [124][125][126][127], and Si/Ge photodiodes [128,129] His research interests include classical and quantum noise in electronic and optical devices, femtosecond lasers and their applications in frequency metrology, precision timing distribution, high-speed signal processing, and attosecond science.…”
Section: Discussionmentioning
confidence: 99%
“…In particular, the rapidly growing field of silicon photonics will enable the integration of major optoelectronic components such as mode-locked lasers [27,122,123], high-speed modulators [124][125][126][127], and Si/Ge photodiodes [128,129] His research interests include classical and quantum noise in electronic and optical devices, femtosecond lasers and their applications in frequency metrology, precision timing distribution, high-speed signal processing, and attosecond science.…”
Section: Discussionmentioning
confidence: 99%
“…Since the output impedance of the radio frequency (RF) power supply is 50 , the 3-dB bandwidth given by the formula 1/(2πRC) is 21.1 GHz, provided that a lumped electrode is applied. Compared with the reported modulators of the same phase shifter length [12], [19], the bandwidth of our structure is competitive. The internal resistance does not limit the modulation bandwidth, so there is no need to reduce it with the penalty of increasing the optical loss.…”
Section: Implantation Condition Optimizationmentioning
confidence: 94%
“…The device in Figure 4 can also be operated in reverse bias [21]. When operated in reverse bias, a depletion region forms at the n-type and p-type junction at the edge of the waveguide.…”
Section: Optical Modulatormentioning
confidence: 99%